Analytical loss model of high voltage GaN HEMT in cascode configuration

Huang, Xiucheng; Li, Qiang; Liu, Zhengyang; Lee, Fred C.

doi:10.1109/ecce.2013.6647173

Cited by 58 publications

(57 citation statements)

References 16 publications

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“…2, which is presented by authors in [7]- [9] to model SiC-JFET, SiC-MOSFET and GaN-HEMT. Current source G ch represent power transistor forward static characteristics, which is controlled by both V DS and V GS voltages.…”

Section: Power Semiconductor Devices Modellingmentioning

confidence: 99%

Developing Power Semiconductor Device Model for Virtual Prototyping of Power Electronics Systems

Evans

Johnson

2016

2016 IEEE Vehicle Power and Propulsion Conference (VPPC)

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Abstract-Virtual prototyping (VP) is very important for power electronics systems design. A virtual prototyping design tool based on different modelling technology and model order reduction is proposed in the paper. In order to combine circuit electromagnetic model with power semiconductor device models, a SiC-JFET behavioural model is presented and implemented in the design tool. A half bridge circuit using SiC-JFET devices is thus represented in the VP software. The presented SiC-JFET behavioural model is then validated by comparing with experimental measurements on switching waveforms.

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Section: Power Semiconductor Devices Modellingmentioning

confidence: 99%

Developing Power Semiconductor Device Model for Virtual Prototyping of Power Electronics Systems

Evans

Johnson

2016

2016 IEEE Vehicle Power and Propulsion Conference (VPPC)

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“…This switching frequency can be calculated according to [6] as shown in (1). √2 ⁄ sin 2 (1) However, the switching frequency is affected by the MOSFET and diode output capacitances, as shown in Fig. 4.…”

Section: Conducted Emi Predictionmentioning

confidence: 99%

“…These devices are formed by using a cascode connected low voltage silicon (Si) MOSFET with a normally on GaN switch. The interconnection of these devices makes cascode structures to present very low turn-off loss, which is almost independent of the current level [1]. This phenomenon happens because the output capacitance of the low voltage side MOSFET and the input capacitance of the GaN switch get charged in parallel by the load current at the turn-off event, minimizing the GaN channel turn-off losses.…”

Section: Introductionmentioning

confidence: 99%

A comparison between boundary and continuous conduction modes in single phase PFC using 600V range devices

Hernández

Petersen

Andersen

2015

2015 IEEE 11th International Conference on Power Electronics and Drive Systems

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Abstract-This paper presents an analysis and comparison of boundary conduction mode (BCM) and continuous conduction mode (CCM) in single phase power factor correction (PFC) applications. The comparison is based on double pulse tester (DPT) characterization results of state-of-the-art superjunction devices in the 600V range. The measured switching energy is used to evaluate the devices performance in a conventional PFC. This data is used together with a mathematical model for prediction of the conducted electromagnetic interference (EMI). This allows comparing the different devices in BCM and CCM operation modes and evaluating the performance as a function of the PFC power density and efficiency.

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“…The switching processes of a SiC MOSFET, which is a high voltage device, are different from the low-voltage devices usually operating at voltages lower than 40V. The drain-source voltage v DS of low-voltage devices drops to 0V before the drain current i D reaches I o during the turn-on transition, and i D can reach 0A before v DS reaches V DC during the turn-off transition [25], [31]. In general, these conditions will not happen to high voltage devices.…”

Section: Introductionmentioning

confidence: 99%

“…It plays a different role with the power loop parasitic inductances. In addition, [31] shows that the switching loss of a Cascode GaN HEMT, which are derived from terminal waveforms based on experiments, are imprecise. This is due to the fact that the energy in the junction capacitances is not dealt with well.…”

Section: Introductionmentioning

confidence: 99%

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Liang¹,

Zheng²,

Li³

2016

Journal of Power Electronics

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This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

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Analytical loss model of high voltage GaN HEMT in cascode configuration

Cited by 58 publications

References 16 publications

Developing Power Semiconductor Device Model for Virtual Prototyping of Power Electronics Systems

Developing Power Semiconductor Device Model for Virtual Prototyping of Power Electronics Systems

A comparison between boundary and continuous conduction modes in single phase PFC using 600V range devices

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

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