Analytical expressions for the drift velocity of hot charge carriers in silicon

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

“…While the parameterizations for electrons in the <111> show an almost constant difference of -5%, the other parameterizations show distinctive differences. The differences to the parameterizations proposed by others [4,5,6,7] are even larger and are not presented here.…”

“…There have been quite a few reviews of this data, the one by Jacoboni et al [3] is especially useful, as it provides a temperature depended parameterization of the drift velocity in <111> direction. There have been other reviews incorporating other measurements and proposing different parameterizations [4,5,6,7], however either temperature dependence or anisotropy is neglected. For electric field values of 10 4 V/cm in <111> orientated silicon at a temperature of 300 K the aforementioned parameterizations produce values scattered by approximately 10% (best case), however the scattering increases significantly for different temperatures (57% for holes at 250 K).…”