Analytical Drain Thermal Noise Current Model Valid for Deep Submicron MOSFETs

Han, Kwangseok; Shin, Hyungcheol; Lee, Kwyro

doi:10.1109/ted.2003.821708

Cited by 106 publications

(82 citation statements)

References 21 publications

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“…The I-V curves are derived from the VS model of Khakifirooz et al, 17 whereas S I,ch in Eq. (16) is given by the compact model of Han et al 22 The model is compared to experimental results from the literature, for devices of 40nm and 10nm channel length. In the rest of the simulations, device parameters such as the channel legth and the oxide thickness are taken from the ITRS 2000, 2003 and 2013 for the 180nm, 100nm and 14nm nodes respectively.…”

Section: Discussionmentioning

confidence: 99%

“…For the thermal noise generated in the channel we use the model described in Han et al 22 S I,ch = 4k B T µ e ff L 2 Q I , where k B is Boltzmann's constant, T is the temperature and Q I is the magnitude of the total inversion layer charge. Solving for the total current noise, we arrive at…”

Section: A Equivalent Noise Circuit Methodsmentioning

confidence: 99%

“…Many channel thermal noise models of various degrees of complexity have been proposed and the interested reader is referred to the literature. 22,30 The development of a purely thermal noise model is outside the scope of this work.…”

Section: White Noise Sourcesmentioning

confidence: 99%

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Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

2015

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Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

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Section: Discussionmentioning

confidence: 99%

Section: A Equivalent Noise Circuit Methodsmentioning

confidence: 99%

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Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

2015

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“…4. However, Tsividis cannot consider the impact of channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE) [24][25][26]. In addition, experimental results indicate that GCR (gradual channal region) significantly contribute to the channel thermal noise [27].…”

Section: Channel Thermal Noisementioning

confidence: 99%

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

Xiang¹,

Huang²,

Liu³

et al. 2017

PIER M

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Abstract-We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-µm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y -parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.

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“…Fig. 8 shows the calculated γ value as a function of gate bias for models proposed by Chen (Chen & Deen, 2002), Han (Han, Shin & Lee, 2004), and Roy (Roy & Enz, 2005), respectively. (Roy & Enz, 2005).…”

Section: Thermal Noise Modelingmentioning

confidence: 99%

Thermal Noise in Modern CMOS Technology

Chen¹

2010

Solid State Circuits Technologies

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Analytical Drain Thermal Noise Current Model Valid for Deep Submicron MOSFETs

Cited by 106 publications

References 21 publications

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

Thermal Noise in Modern CMOS Technology

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