Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions

Raut, Pratikhya; Nanda, Umakanta; Panda, Deepak Kumar

doi:10.1016/j.mejo.2023.105761

Cited by 9 publications

(6 citation statements)

References 23 publications

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“…The dielectric material added to the semiconductor device will act as a storage element that increases its gate capacitance by lowering the leakage current and these materials are having good electromagnetic and biocompatibility property with more chemical resistivity that increase the conductivity of the device. Therefore, it is observed from the figure that as the high K ‐dielectric value increases its drain current increases 18,29 …”

Section: Different Simulation Results With Explanationsmentioning

confidence: 97%

“…Now, to analyze the PSD of MoS 2 FET transistor, we use the developed MOSFET noise power equation based on the concept of a conventional theorem from the References [18,19,29,30]. The noise power equation is given as

S_{id} ((), f) goodbreak= \frac{I^{2} italicKT}{λWLf} {[\frac{1}{M_{2 d}} + (ἁ + ώ) μ]}^{2} δ_{t} ((), E_{n}); italicwhere δ_{t} ((), E_{n}) goodbreak= δ_{t 0} goodbreak+ δ_{tx} e^{- \frac{(E_{c} - E_{n})}{ε}}

where lambda is the attenuation coefficient of an electron in the oxide‐

λ = \frac{2}{p^{2}} \sqrt{2 mo (\emptyset_{B} - E_{g})}

.…”

Section: Analytical Model Developmentmentioning

confidence: 99%

“…Later, using differentiation method, Equation ( 5) is differentiated for different operating regions by considering the drift-diffusion velocities of the device, trap capacitances, trap energies, and oxide thicknesses of different dielectric materials and simplified the equation as Equations ( 6) and (7). 9,21 Now, to analyze the PSD of MoS 2 FET transistor, we use the developed MOSFET noise power equation based on the concept of a conventional theorem from the References [18,19,29,30]. The noise power equation is given as…”

Section: Analytical Model Developmentmentioning

confidence: 99%

“…In more recent developments, LFN models address disturbances occurring at frequencies below a few kilohertz, classifying noise into types like Flicker (1/ f ) Noise, Random Telegraph Noise (RTN), Generation‐Recombination (G‐R) Noise, Contact or Interface Noise, each with distinct origins and characteristics. LFN is generated by accounting for both uniform and exponential trap energy distributions, with previous models considering variations in mobility and carrier density fluctuations 11,18–20 …”

Section: Introductionmentioning

confidence: 99%

“…LFN is generated by accounting for both uniform and exponential trap energy distributions, with previous models considering variations in mobility and carrier density fluctuations. 11,[18][19][20] Building on existing models, our proposed model expresses drain current in a closed-form linear differential equation with a constant electrostatic potential. Traps are categorized into spatial distribution, found within the material's structure, and energetic distribution, representing the range of energy levels for charge carrier capture and release.…”

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confidence: 99%

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Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Kumar,

Panda

2023

Int J Numerical Modelling

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In this paper, an analytical drain current model of double gate MoS2 FET Transistor for low‐frequency noise (LFN) power spectral density is developed, and compared its response with the device simulation of the proposed device structure. The developed low‐frequency noise power spectral density (PSD) model is analyzed with respect to different Trap densities, Oxide thicknesses, and high K‐dielectric materials using the TCAD Device simulation tool. Low‐frequency noise is one of the most important noises in any device since it degrades the device's performance. So, in this paper, we used a unique charge‐control model for analyzing the low‐frequency noise by considering the mobility degradation, trapping, and de‐trapping effects caused by trap densities and device lattice structure. Usually, all the previous studies on drain currents with low frequency are based on fluctuations caused by mobility and carrier variations. In our paper, we even considered the charge density fluctuation to analyze the drain current equation. Using a Charge Control Model, we can compute the parameters like gate capacitance (Cgs, Cgd), channel length modulation, and body effect. While other LFN models like the DC model, small signal model, and hybrid model will focus mainly on the static characteristics of the device such as its DC current–voltage (I‐V) relationship, terminal resistances, and input/output conductance of the devices. All the analytical model results were calibrated with the device simulation and it is observed that both are matches each other. Further, it is observed that with an increase in Trap density, the low‐frequency noise increases and low‐frequency noise is dominant at lower frequencies only (1–10 Hz), and after this frequency range the thermal noise will be the dominant noise factor.

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Section: Different Simulation Results With Explanationsmentioning

confidence: 97%

S_{id} ((), f) goodbreak= \frac{I^{2} italicKT}{λWLf} {[\frac{1}{M_{2 d}} + (ἁ + ώ) μ]}^{2} δ_{t} ((), E_{n}); italicwhere δ_{t} ((), E_{n}) goodbreak= δ_{t 0} goodbreak+ δ_{tx} e^{- \frac{(E_{c} - E_{n})}{ε}}

where lambda is the attenuation coefficient of an electron in the oxide‐

λ = \frac{2}{p^{2}} \sqrt{2 mo (\emptyset_{B} - E_{g})}

.…”

Section: Analytical Model Developmentmentioning

confidence: 99%

Section: Analytical Model Developmentmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Kumar,

Panda

2023

Int J Numerical Modelling

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Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor

Chaujar,

Yirak

2024

Microsyst Technol

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Metal gate work function engineering for nano-scaled trigate FinFET

Lalruatfela,

Panchanan,

Maity

et al. 2024

Microsyst Technol

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Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions

Cited by 9 publications

References 23 publications

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor

Metal gate work function engineering for nano-scaled trigate FinFET

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Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions

Cited by 9 publications

References 23 publications

Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps

Numerical modelling for triple hybrid gate optimization dielectric modulated junctionless gate all around SiNWFET based uricase and ChOX biosensor

Metal gate work function engineering for nano-scaled trigate FinFET

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Product

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Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps

Low‐frequency noise model development of MoS₂ field effect transistor and its analysis with respect to different traps