2013
DOI: 10.1051/epjap/2013120345
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Analytical calculation of site and surface reaction probabilities of SiHxradicals in PECVD process

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Cited by 2 publications
(1 citation statement)
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“…In our previous works [20][21][22][23][24], we were interested in the study of the gas phase and the interaction of plasmas with the surface, for SiH 4 /H 2 and CH 4 /H 2 gas mixtures during PECVD processes. The used numerical simulation techniques were MCS and MDS.…”
Section: Simulation Work On the Pecvd Using Mcs And Mdsmentioning
confidence: 99%
“…In our previous works [20][21][22][23][24], we were interested in the study of the gas phase and the interaction of plasmas with the surface, for SiH 4 /H 2 and CH 4 /H 2 gas mixtures during PECVD processes. The used numerical simulation techniques were MCS and MDS.…”
Section: Simulation Work On the Pecvd Using Mcs And Mdsmentioning
confidence: 99%