Monte Carlo Simulation of Chemical Reactions in Plasma Enhanced Chemical Vapor Deposition: from Microscopic View to Macroscopic Results

Babahani, Oumelkheir; Hadjadj, Sadok.; Khelfaoui, F.; Kebaili, H. O.; Lemkeddem, Soumaya

doi:10.1007/s12633-018-9916-y

Cited by 3 publications

(6 citation statements)

References 19 publications

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“…• The second important chemical reaction in the SiH 4 dissociation is R1: SiH 4 +e! SiH 3 + H + e [24]. This result is compatible with that of Perkins et al [51] and that of Doyle et al [52].…”

Section: Calculation Of Statistical Properties and Some Results Of Thsupporting

confidence: 91%

“…• The reaction R2: SiH 4 +e! SiH 2 + 2H + e plays the central role in SiH 4 dissociation by electron impact [24]. This result is compatible with [39].…”

Section: Calculation Of Statistical Properties and Some Results Of Thsupporting

confidence: 81%

“…In our previous works [20][21][22][23][24], we were interested in the study of the gas phase and the interaction of plasmas with the surface, for SiH 4 /H 2 and CH 4 /H 2 gas mixtures during PECVD processes. The used numerical simulation techniques were MCS and MDS.…”

Section: Simulation Work On the Pecvd Using Mcs And Mdsmentioning

confidence: 99%

“…In this section, we present an example of PP-MCS of collisions and reactions in gas phase of SiH 4 /H 2 mixture used in PECVD process. Some paragraphs have been treated in previous works [21,24].…”

Section: Example Of Application: Monte Carlo Simulation Of a Gas Mixtmentioning

confidence: 99%

“…All chemical systems go naturally toward states of minimum Gibbs free energy [21,24]. A chemical reaction tends to occur in the direction of lower Gibbs free energy.…”

Section: Treatment Of Elastic and Inelastic Collisionsmentioning

confidence: 99%

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How to Use the Monte Carlo Simulation Technique? Application: A Study of the Gas Phase during Thin Film Deposition

Khelfaoui¹,

Babahani²

2019

Theory, Application, and Implementation of Monte Carlo Method in Science and Technology

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Many physical phenomena can be modeled using Monte Carlo simulation (MCS) because it is a powerful tool to study thermodynamic properties. MCS can be used to simulate interactions between several particles or bodies in the presence of local or external fields. The main idea is to create a high number of different random configurations; statistics can be taken according to appropriate algorithms (Metropolis algorithm). In this chapter, we present basic techniques of MCS as the choice of potential, reaction rates, simulation cell, random configurations, and algorithms. We present some principal ideas of MCS used to study particle-particle collisions in the gas and in plasmas. Other MCS techniques are presented briefly. A numerical application is presented for collisions in gas phase during thin film deposition by plasmaenhanced chemical vapor deposition (PECVD) processes. Parameters and results of the simulation are studied according to a chosen reactor and mixture.

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Section: Calculation Of Statistical Properties and Some Results Of Thsupporting

confidence: 91%

“…• The reaction R2: SiH 4 +e! SiH 2 + 2H + e plays the central role in SiH 4 dissociation by electron impact [24]. This result is compatible with [39].…”

Section: Calculation Of Statistical Properties and Some Results Of Thsupporting

confidence: 81%

Section: Simulation Work On the Pecvd Using Mcs And Mdsmentioning

confidence: 99%

Section: Example Of Application: Monte Carlo Simulation Of a Gas Mixtmentioning

confidence: 99%

“…All chemical systems go naturally toward states of minimum Gibbs free energy [21,24]. A chemical reaction tends to occur in the direction of lower Gibbs free energy.…”

Section: Treatment Of Elastic and Inelastic Collisionsmentioning

confidence: 99%

See 3 more Smart Citations

How to Use the Monte Carlo Simulation Technique? Application: A Study of the Gas Phase during Thin Film Deposition

Khelfaoui¹,

Babahani²

2019

Theory, Application, and Implementation of Monte Carlo Method in Science and Technology

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Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on SiliconGermanium Alloy Growth by PECVD Techniques

Uene

Mabuchi

Zaitsu

et al. 2021

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Monte Carlo and Kinetic Monte Carlo Models for Deposition Processes: A Review of Recent Works

Cheimarios

Kokkoris

et al. 2021

Front. Phys.

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Monte Carlo (MC) and kinetic Monte Carlo (kMC) models are widely used for studying the physicochemical surface phenomena encountered in most deposition processes. This spans from physical and chemical vapor deposition to atomic layer and electrochemical deposition. MC and kMC, in comparison to popular molecular methods, such as Molecular Mechanics/Dynamics, have the ability to address much larger time and spatial scales. They also offer a far more detailed approach of the surface processes than continuum-type models, such as the reaction-diffusion models. This work presents a review of the modern applications of MC/kMC models employed in deposition processes.

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Monte Carlo Simulation of Chemical Reactions in Plasma Enhanced Chemical Vapor Deposition: from Microscopic View to Macroscopic Results

Cited by 3 publications

References 19 publications

How to Use the Monte Carlo Simulation Technique? Application: A Study of the Gas Phase during Thin Film Deposition

How to Use the Monte Carlo Simulation Technique? Application: A Study of the Gas Phase during Thin Film Deposition

Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on SiliconGermanium Alloy Growth by PECVD Techniques

Monte Carlo and Kinetic Monte Carlo Models for Deposition Processes: A Review of Recent Works

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