2016
DOI: 10.1016/j.mee.2015.11.012
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Analytical and finite element modeling of through glass via thermal stress

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Cited by 18 publications
(5 citation statements)
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“…A metallization process filled with Ag-paste composite solution was presented, and its effectiveness was compared with that of the general Cu electroplating process; the analytical results revealed that the aforementioned metallization process would introduce different cracking behaviors [ 19 ]. The analytical model and FEA simulation approach have been widely adopted to reduce the time-consuming experimental work due to the cost of the semiconductor fabrication process [ 20 , 21 , 22 ]. An analytical model was derived to estimate the thermal stress and warpage in terms of different geometrical parameters and material selections [ 20 , 21 ].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…A metallization process filled with Ag-paste composite solution was presented, and its effectiveness was compared with that of the general Cu electroplating process; the analytical results revealed that the aforementioned metallization process would introduce different cracking behaviors [ 19 ]. The analytical model and FEA simulation approach have been widely adopted to reduce the time-consuming experimental work due to the cost of the semiconductor fabrication process [ 20 , 21 , 22 ]. An analytical model was derived to estimate the thermal stress and warpage in terms of different geometrical parameters and material selections [ 20 , 21 ].…”
Section: Introductionmentioning
confidence: 99%
“…The analytical model and FEA simulation approach have been widely adopted to reduce the time-consuming experimental work due to the cost of the semiconductor fabrication process [ 20 , 21 , 22 ]. An analytical model was derived to estimate the thermal stress and warpage in terms of different geometrical parameters and material selections [ 20 , 21 ]. Heating temperature, dwell time, gap width, and surface tension were interpolated in the derived analytical model, and they influenced the reflow speed [ 22 ].…”
Section: Introductionmentioning
confidence: 99%
“…For different filling materials of TGV, the crack formation mechanism can differ considerably; moreover, radial-type and circumferential-type cracks were found in electroplated Cu-filled TGV and sliver-paste-filled TGV during the heating process in [ 18 ]. The structural layout design factor of stress-to-size ratio was analyzed, and the analysis results showed that the Cu via thickness considerably affected the stress behavior in the glass interposer and should be carefully managed to reduce the stress and decrease the size of the package in [ 19 ]. Similar structures on both sides of the glass panel were preferred in order to minimize a process-induced warpage issue prior to assembly in [ 20 ].…”
Section: Introductionmentioning
confidence: 99%
“…Interposer-based 2.5 D integration, where heterogeneous chips are stacked on an interposer substrate, is one of the most promising technologies to offer high input/output (I/O) density, low power consumption and small form factor for high-performance applications such as mobile and cloud computing (Benali et al , 2016; Zhang et al , 2016). As a mature semiconductor material, silicon (Si) has often been chosen as the interposer substrate to provide effective solutions to system integration.…”
Section: Introductionmentioning
confidence: 99%