Analytic solutions for optimized ellipsometric measurements of interfaces and surface layers in thin film structures

Alterovitz, Samuel A.; Bu-Abbud, George H.; Woollam, John A.

doi:10.1016/0040-6090(85)90159-2

Cited by 12 publications

(5 citation statements)

References 11 publications

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“…A problem with the enhanced sensitivity measurements is the corresponding increasing influence of errors to optimized conditions. A high value of ah/or will increase the sensitivity of h not only to changes of the optical parameters of the system, but also to any errors in the angle of in- cidence, r For our high sensitivity configurations (4 ~ 0 ~ the largest contribution to 5he~ comes from the angle of incidence error 8r (31). Therefore, in order to obtain more reliable values for the parameters (or to determine values for a larger number of parameters), an accurate measurement ofr is important.…”

Section: ~ --And --= --[12]mentioning

confidence: 89%

“…It is desirable to determine the optimum sensitivity in terms of the controllable parameters, 4, and X. From the analytical solution for optimized ellipsometric measurements of interfaces with L~,f << k/4 in thin film structure (31), it was shown that the condition of 5p/p divergence or maximum sensitivity is rP(~nd~) r[~ ~a~) exp (-2i~) 0 [10] Ol + = where the r's are the Fresnel reflection coefficients with subscripts corresponding to the interface between the media with numbering starting from O with the ambient and ~ is given as…”

Section: The Optical Modelmentioning

confidence: 99%

“…[10] becomes r12 or, taking into account no ~ nov, r02 --0. For the p wave this condition is equal to a minimum of the eUipsometric angle, 't,(4,, X) (31).…”

Section: The Optical Modelmentioning

confidence: 99%

“…59, Moscow 11733, Russia. troscopic region is appropriate (30)(31). Using this technique, Aspnes and Theeten (11,12) performed SE measurements on thermally oxidized Si with SiO2 thicknesses of 120-160 nm and found an interface transition region of about 0.7 nm that consists of atomically mixed Si and O with average stoichiometry SiO0.…”

mentioning

confidence: 99%

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An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

Yakovlev

Irene

1992

J. Electrochem. Soc.

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In this research we demonstrate an ellipsometry technique that is sensitive to the interfacial region between a dielectric film and substrate. Essentially, a film with substrate is immersed in a liquid that index matches to the film, thereby optically removing the film from the measurement. In addition, the use of spectroscopic and multiple angles of incidence ellipsometry provide sufficient specification of the interface parameters, which, along with the enhanced sensitivity to the interface, enables the optical measurement of the interfacial properties. Theoretical and experimental verification is provided, along with application to the Si-SiO~ interface.

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Section: ~ --And --= --[12]mentioning

confidence: 89%

Section: The Optical Modelmentioning

confidence: 99%

“…[10] becomes r12 or, taking into account no ~ nov, r02 --0. For the p wave this condition is equal to a minimum of the eUipsometric angle, 't,(4,, X) (31).…”

Section: The Optical Modelmentioning

confidence: 99%

mentioning

confidence: 99%

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An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

Yakovlev

Irene

1992

J. Electrochem. Soc.

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“…It is desirable to determine the optimum sensitivity in terms of the controllable parameters, 0 and X. From the analytical solution for optimized ellipsometric measurements of interfaces with L0 << X/4 in thin film structure (31), it was shown that the condition of 6p/p divergence or maximum sensitivity is:…”

Section: Tmentioning

confidence: 99%

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

Yakovlev¹,

Irene²

1991

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Plasma Modification of Polymer Films Studied by Ellipsometry and Infrarot Spectroscopy

Rochotzki

Nitschke

Arzt

et al. 1994

Phys. Stat. Sol. (a)

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Thin polymer films (thickness d = 10 to 50 nm) modified in a low‐pressure plasma of air, oxygen, argon, or tetrafluoromethane (p = 10 to 100 Pa) are investigated. It is shown that the interaction between plasma species (ions, electrons, radicals, UV quanta) and the polymer causes structural changes in the surface and subsurface regions. The formation of a modified surface layer can be observed. Fourier transform infrared (FTIR) attenuated total reflection (ATR) spectroscopy is used for the structural analysis of polymer modification. The structural changes detected by FTIR spectroscopy are accompanied by changes of optical properties, like the refractive index. The optical modification effects are investigated by spectroscopic ellipsometry (λ = 300 to 800 nm). For the analysis of the modification depth a multilayer model has to be applied to fit the ellipsometric data.

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Analytic solutions for optimized ellipsometric measurements of interfaces and surface layers in thin film structures

Cited by 12 publications

References 11 publications

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si ‐ SiO2

An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2

Plasma Modification of Polymer Films Studied by Ellipsometry and Infrarot Spectroscopy

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