Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries

Jang, Hye‐Won; Kim, Kihwan; Oh, Saeroonter; Yoon, Sung‐Min

doi:10.23919/am-fpd.2019.8830599

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…The excellent bending performance of the fabricated flexible VTFTs could be suggested to result from their structural merits as well as thin film thickness of PI substrate. In our previous work, the planar TFTs fabricated on 1.2 μm thick PI substrates also showed stable operation at a small radius of curvature . In this regard, it is very important to understand the effect of substrate thickness.…”

Section: Results and Discussionmentioning

confidence: 98%

“…In our previous work, the planar TFTs fabricated on 1.2 μm thick PI substrates also showed stable operation at a small radius of curvature. 33 In this regard, it is very important to understand the effect of substrate thickness. In general, since the substrate is much thicker than the thin-film device, the mechanical strain induced in the device plane is dominantly determined by substrate thickness, regardless of the physical properties of the materials.…”

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

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Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Kim

Furuta

Yoon

2019

ACS Appl. Electron. Mater.

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Mechanically flexible vertical-channel-structured thin-film transistors (VTFTs) with a channel length of 200 nm were fabricated on 1.2 μm thick colorless polyimide (CPI) substrates. All layers composing the gate stacks were prepared by atomic-layer deposition (ALD) with a good step coverage, and the process thermal budget was designed below 180 °C. Zeocoat was introduced as a spacer material to improve the device characteristics by properly determining the process conditions for clearly forming the vertical sidewalls. The transfer characteristics of the fabricated flexible ZnO and IGZO VTFTs showed the field-effect mobility of 3.31 and 6.57 cm2 V–1 s–1, the threshold voltages of 2.34 and 1.52 V, the subthreshold swings of 1.42 and 0.34 V/dec, and I ON/I OFF of 1.13 × 104 and 5.16 × 105, respectively, after the postannealing at 150 °C. The threshold voltage shifts (ΔV TH) under positive and negative bias stresses (PBS and NBS) were estimated to be +1.0, +1.8 V and −1.8, −3.8 V for 104 s for ZnO and IGZO VTFTs, respectively. The flexible IGZO VTFTs delaminated by means of a laser lift-off process did not show any marked degradation in device characteristics under mechanically strained conditions at various radii of curvature (R c). The ΔV TH values were also estimated to be +1.2 and −2.1 V under PBS and NBS at R c of 1 mm, respectively, demonstrating stable bending reliability. Appropriate choices of spacer materials, optimization of patterning process for spacer patterns, and ALD process of IGZO active channel can be proposed as key process parameters for guaranteeing excellent device performance of the oxide-channel VTFTs in this work.

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Section: Results and Discussionmentioning

confidence: 98%

Section: Acs Applied Electronic Materialsmentioning

confidence: 99%

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Kim

Furuta

Yoon

2019

ACS Appl. Electron. Mater.

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Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Choi,

Seo,

Yoon

et al. 2023

Nanomaterials

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A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 1010 Jones (biased at −1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications.

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Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries

Cited by 2 publications

References 7 publications

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

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