Analysis of Variations in Structure from High Resolution Electron Microscope Images by Combining Real Space and Fourier Space Information

Hÿtch, Martin

doi:10.1051/mmm:1997105

Cited by 115 publications

(68 citation statements)

References 13 publications

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“…7 was taken from a thick region of the specimen, like the previous ADF-STEM images, to minimize the influence of surface relaxation. Because of thickness effects, HRTEM images do not display a contrast directly representative of the atomic structure [40]. For instance, the Si dumbbells are not visible, and the contrast near the dislocations varies strongly.…”

Section: Discussionmentioning

confidence: 99%

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Couillard

Radtke

Botton

2013

Philosophical Magazine

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/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr Access and use of this website and the material on it are subject to the Terms and Conditions set forth at http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10. 1080/14786435.2013.778428 Philosophical Magazine, 93, 10-12, pp. 1250Magazine, 93, 10-12, pp. -1267Magazine, 93, 10-12, pp. , 2013 Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A. Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic-resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a 9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images.Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, the rapid-acquisition method provides measurements of atomic displacements with an accuracy below 10 pm. Finally, advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

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Section: Discussionmentioning

confidence: 99%

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Couillard

Radtke

Botton

2013

Philosophical Magazine

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“…The EELS scans in STEM mode were performed across the layers interfaces with a collection angle of 28.6 mrad and a convergence angle of 10.4 mrad. Geometric Phase Analysis (GPA) 19,20 were performed using the DigitalMicrograph GPA plugin on HREM images obtained with a Tecnai F20 microscope equipped with a Cs corrector avoiding delocalization effects. Fig.1 shows three HREM images recorded on the terms m = 1, 2 and 3 along the [100] p orientation of the substrate.…”

Section: Methodsmentioning

confidence: 99%

Microstructure and interface studies ofLaVO3/SrVO3superlattices

et al. 2011

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The structure and interface characteristics of (LaVO3)6m(SrVO3)m superlattices deposited on (100)-SrTiO3 (STO) substrate were studied using Transmission Electron Microscopy (TEM). Crosssection TEM studies revealed that both LaVO3 (LVO) and SrVO3 (SVO) layers are good single crystal quality and epitaxially grown with respect to the substrate. It is evidenced that LVO layers are made of two orientational variants of a distorted perovskite compatible with bulk LaVO3 while SVO layers suffers from a tetragonal distortion due to the substrate induced stain. Electron Energy Loss Spectroscopy (EELS) investigations indicate changes in the fine structure of the V L23 edge, related to a valence change between the LaVO3 and SrVO3 layers.

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“…15 Each method is calibrated using measurements obtained on the perfectly oriented Si substrate, far from the Si-SiO 2 -HfO 2 interface to avoid the region where the Si is stressed. These calibration experiments show that the error bars for the lattice constant determinations are smaller than 2%.…”

Section: A Hrem Investigationsmentioning

confidence: 99%

Crystal structure and band gap determination of HfO2 thin films

Cheynet¹,

Pokrant²,

Tichelaar³

et al. 2007

Journal of Applied Physics

147

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Valence electron energy loss spectroscopy ͑VEELS͒ and high resolution transmission electron microscopy ͑HRTEM͒ are performed on three different HfO 2 thin films grown on Si ͑001͒ by chemical vapor deposition ͑CVD͒ or atomic layer deposition ͑ALD͒. For each sample the band gap ͑E g ͒ is determined by low-loss EELS analysis. The E g values are then correlated with the crystal structure and the chemical properties of the films obtained by HRTEM images and VEELS line scans, respectively. They are discussed in comparison to both experimental and theoretical results published in literature. The HfO 2 ALD film capped with poly-Si exhibits the largest band gap ͑E g = 5.9± 0.5 eV͒, as a consequence of its nanocrystallized orthorhombic structure. The large grains with a monoclinic structure formed in the HfO 2 ALD film capped with Ge and the carbon contamination induced by the precursors in the HfO 2 CVD film capped with Al 2 O 3 are identified to be the main features responsible for lower band gap values ͑E g = 5.25± 0.5 and 4.3± 0.5 eV respectively͒.

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Analysis of Variations in Structure from High Resolution Electron Microscope Images by Combining Real Space and Fourier Space Information

Cited by 115 publications

References 13 publications

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Microstructure and interface studies ofLaVO3/SrVO3superlattices

Crystal structure and band gap determination of HfO2 thin films

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