Analysis of trapping and detrapping in semi-insulating GaAs detectors

Rogalla, M.; Eich, T.; Evans, Neal C.; Geppert, R.; Göppert, R.; Irsigler, R.; Ludwig, J.; Runge, K.; Schmid, Th.; Marder, Dietmar

doi:10.1016/s0168-9002(97)00632-3

Cited by 27 publications

(11 citation statements)

References 6 publications

(6 reference statements)

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“…Compared to the widely used Si and Ge detectors, both of which are limited to either room or liquid nitrogen cooled temperatures, respectively, GaN is characterized by a much wider band-gap, making it capable of working in environments well above room temperature. Shortcomings in other wide band-gap semiconductors such as short carrier lifetimes (10 ns) in GaAs due to the dominant EL2 native deep-level defect, 30 the large number of deep-level defects 31 in AlN, and the high cost of diamond 32 limits their implementation as radiation detectors. Compared to SiC that has an in-direct band-gap, GaN has a higher mobility and thus better electrical properties.…”

Section: A Basic Parametersmentioning

confidence: 99%

“…Undoped GaN shows n-type properties due to the residual shallow donors such as oxygen in MOCVD-grown GaN 13 and silicon in HVPE-grown GaN 67 (shallow donors are defined as impurities that ionize at room temperature, which corresponds to an activation energy of 100 meV). Oxygen donors result in a background free-carrier concentration between 10 15 and 10 17 cm À3 with an activation energy of [30][31][32][33] that is below the conduction band minimum (CBM). GaN can be intentionally doped with Si to form an n-type material through either as-growth or post-growth implantation.…”

Section: B Gan Growthmentioning

confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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Section: A Basic Parametersmentioning

confidence: 99%

Section: B Gan Growthmentioning

confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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show abstract

“…For a single electron-hole pair produced at a point with coordinate ı 0 , the CCE is written where d is the electrode spacing (detector thickness) and λ e and λ h are the electron and hole drift lengths, respectively [15]. The drift lengths are given by λ e = µ e τ e E,…”

Section: Figures Of Meritmentioning

confidence: 99%

“…Carrier trapping, particularly in high fields (10 4 V cm -1 ), is mainly by the EL2 level (0.8 eV) [2,10,15,19]. Its capture cross section grows to about 8 × 10 −14 cm 2 with field strength.…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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An attempt is made to analyze and summarize the literature data on hybrid x-ray GaAs pixel detectors designed for medical imaging. Criteria are stated for selecting a semiconductor material. It is shown that GaAs is currently preferable to the other semiconductor materials. Detector figures of merit used to select a semiconductor material and a process technology are listed. Major types of x-ray detector based on bulk-grown or epitaxial GaAs are described, namely, the planar Schottky, the planar p-i-n, and the 3D detector. The influence is considered of different process steps (contact formation, passivation coating, hybridization, etc.) on detector figures of merit. Monolithic technology is briefly discussed.

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“…It has been shown that these deep donors could limit the lifetime of charge carriers by acting as trapping centres [6]. Electron-hole pairs generated by incoming X-ray photons can be trapped on their way to the readout electrodes, so that only a fraction of the generated charge is detected.…”

Section: Imaging Propertiesmentioning

confidence: 99%