Analysis of Threshold Voltage Variance in 45nm N-Channel Device Using L₂₇ Orthogonal Array Method

Abstract

In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.

Optimization of 16 nm DG-FinFET using L25 orthogonal array of taguchi statistical method

“…The enhancement of design processes in the Polysilicon/Silicon Dioxide (PolySi/SiO2)-based DG-FinFET can be furthered in terms of its robustness through the variations of statistical method that have been implemented in numerous Nano engineering designs [12][13][14][15][16][17][18]. The process parameters have been optimized through the application of Taguchi method by Salehuddin et al and Afifah et al The aforementioned authors have highlighted the optimization of both VTH and IOFF for a 45 nm besides lowering the IOFF whilst nominalized the VTH for a 22 nm design [19][20][21][22][23]. In this study, simulation based fabrication is carried as this allows the experiment to be done repetitively with respect to the feasibility of cost for which is exponentially less in comparison to conducting the actual experiment other than the fact that the simulation based experimentations allows problem identifications to take its place prior to the actual experiment to take its place.…”