Analysis of thin films arising from electron-, ion- and photon-beam-induced decomposition of Cr(CO)6 and Al(CH3)3

Bigelow, Richard W.; Black, J. G.; Salaneck, W. R.; Thomas, H. R.

doi:10.1016/0040-6090(82)90300-5

Cited by 26 publications

(3 citation statements)

References 39 publications

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“…The typical deviation in binding energies was 0.2 eV or less, indicating good precision in the values quoted. In addition to these data, several other sources were used as references (7,8,(14)(15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25). The results listed in Table I show good agreement between the current results and those in the literature.…”

Section: Resultsmentioning

confidence: 99%

“…The MoO4 -2 on the other hand, decreases at more noble potentials. We would expect the presence of a stable molybdate anion in the film in this region to impede the movement of anions thereby protecting the underlying alloy from attack (19). At higher Mo concentrations, more Mo is found in the oxide, and higher concentrations of the molybdate layer are found at higher potentials.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Surface Chemistry of Sputter‐Deposited Al‐Mo and Al‐Cr Alloys Polarized in 0.1N KCl

Moshier¹,

Davis²,

Cote³

1989

J. Electrochem. Soc.

101

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A study was performed to investigate the changes that take place in the chemistry of the passive film that forms on A1 alloys containing either Mo or Cr, as a function of solute concentration and applied potential in 0.1N KC1. The results show that the mechanisms by which the solute protects the Al alloy differ. Molybdenum forms a film containing MoO4 -2 that impedes the ingress and movement of the C1-anion in the film. In contrast, Cr forms a CrOOH barrier layer that inhibits the oxidation of the A1 substrate and restricts the C1-anions from reaching the metal/film interface. The results show that pitting of A1-Mo alloys occurs when sufficient MoO4 2 is replaced by hydrated Mo § compounds, whereas pitting of the A1-Cr alloys occurs when Cr +3 is oxidized to the more soluble Cr § state.Aluminum and its alloys are known for their poor resistance to localized attack and, in particular, for pitting in aqueous chloride-containing environments. The formation of pits is caused by the breakdown of the passive film in the presence of chlorides due to its interaction and chemical reaction with the chloride anion. This results in the formation of a more soluble, and therefore less protective, film which eventually leads to the rapid localized dissolution of A1 metal and the formation of a pit.Elements like Mo or Cr promote passivity in A1 if they can be retained in solid solution without the formation of precipitates which can serve as active microgalvanic cells. Retention of these additions in solid solution can be accomplished by several nonequilibrium alloying techniques (1-4). Since the corrosion behavior of A1 is dependent upon the protective properties of the passive film, the presence of these elements in the film improves the protective nature of the film by decreasing its susceptibility to pitting attack.Changes in the passive film can be studied by monitoring the products of the reactions. X-ray photoelectron spectroscopy (XPS) is an ex situ surface-sensitive technique that has been widely used to study the chemistry of passive films (4)(5)(6)(7)(8)(9)(10)(11)(12). This technique provides a quantitative analysis of the passive film and yields information regarding the oxidation state of the elemental species present, thereby providing insight into the nature of the chemical changes that occur during passivation and film breakdown in the presence of chlorides.The purpose of this paper is to study the changes occurring in the passive film on sputter-deposited A1 alloys containing either Mo and Cr as a function of applied potential from the open-circuit potential (Eoc) to the breakdown, or pitting, potential (Eb). The changes in the surface chemistry, are used to study the mechanism by which these alloying additions affect the passive behavior of A1 in aqueous chloride environments.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Surface Chemistry of Sputter‐Deposited Al‐Mo and Al‐Cr Alloys Polarized in 0.1N KCl

Moshier¹,

Davis²,

Cote³

1989

J. Electrochem. Soc.

101

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“…Organometallic compounds are widely used as a source of elements generated upon exposure to energy, which may be thermal or energetic beams in the form of photons [1-10], electrons [11,12] or ions [13][14][15][16]. We describe an experiment, in which we use tunable UV laser photons of precisely defined energy for the decomposition of gaseous organometallics, namely AI(CH3)3.…”

Section: Pacs: 8115 8250mentioning

confidence: 99%

Tunable UV laser photolysis of organometallics with product detection by laser mass spectroscopy: Trimethylaluminum

Beuermann

Stuke

1989

Appl. Phys. B

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Abstract. We use tunable UV laser light in the region 200-320 nm, produced by frequency doubling the output of a dye laser, for the decomposition of organometallic compounds. This method has been applied to TMA, trimethylaluminum AI(CH3) 3. Only the TMA monomer absorbs UV light for 2 > 220 rim. TMA decomposes by one-photon absorption mainly into two channels: aluminum atoms A1 plus organic fragments, and aluminummonomethyl A1CH3 molecules plus organic fragments. The ratio [A1]/[A1CH3] is wavelength dependent. We present a mechanism to explain the photolysis of trimethyl compounds of group III elements (A1, Ga, In). PACS: 81.15, 82.50Organometallic compounds are widely used as a source of elements generated upon exposure to energy, which may be thermal or energetic beams in the form of photons [1-10], electrons [11,12] or ions [13][14][15][16]. We describe an experiment, in which we use tunable UV laser photons of precisely defined energy for the decomposition of gaseous organometallics, namely AI(CH3)3. Our results show how organometallics of the trimethyl type (A1, Ga, In) interact with UV (laser) light.

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Chemical Vapor Deposition of Metal‐Containing Thin‐Film Materials from Organometallic Compounds

Spencer¹

1994

Progress in Inorganic Chemistry

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Analysis of thin films arising from electron-, ion- and photon-beam-induced decomposition of Cr(CO)6 and Al(CH3)3

Cited by 26 publications

References 39 publications

Surface Chemistry of Sputter‐Deposited Al‐Mo and Al‐Cr Alloys Polarized in 0.1N KCl

Surface Chemistry of Sputter‐Deposited Al‐Mo and Al‐Cr Alloys Polarized in 0.1N KCl

Tunable UV laser photolysis of organometallics with product detection by laser mass spectroscopy: Trimethylaluminum

Chemical Vapor Deposition of Metal‐Containing Thin‐Film Materials from Organometallic Compounds

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