Analysis of the temperature dependent thermal conductivity of silicon carbide for high temperature applications

Abstract

The temperature dependent thermal conductivity of silicon carbide has been calculated taking into account the various phonon scattering mechanisms. The results compared very well with available experimental data. The inclusion of four-phonon processes is shown to be necessary for obtaining a good match. Several important phonon scattering parameters have been extracted in this study. Dislocations are shown to have a strong effect at 300 K, but not as much at the higher temperatures.

Enhancement of Interfacial Thermal Conductance of SiC by Overlapped Carbon Nanotubes and Intertube Atoms

“…This is in striking contrast to the thermal conductivity behavior of CNTs and SiC, where the thermal conductivity at higher temperatures is found to be lower. 37,[39][40][41] The monotonic increase of ITC is also observed in previous work. 28 It might be due to the fact that as the temperature increases, more phonons are excited in both SiC and CNT, and thus, contribute more to the ITC.…”

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Ultra high temperature ceramics for hypersonic vehicle applications.

“…The limited number of data points were fit well by an equation of the form A + BT + CT -1 . Though the thermal diffusivity of silicon carbide is known to have a power law dependence with temperature 29 , this is not known for the diborides.…”