Enhancement of Interfacial Thermal Conductance of SiC by Overlapped Carbon Nanotubes and Intertube Atoms

Deng, Chengcheng; Yu, Xiaoxiang; Huang, Xiaoming; Yang, Nuo

doi:10.1115/1.4035998

Cited by 9 publications

(7 citation statements)

References 41 publications

(28 reference statements)

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“…The slightly lower κ x of heavily-doped PEDOT arises from higher doping concentration and thus larger volume density of interface regions compared with lightly-doped PEDOT. Correspondingly, there is no obvious temperature dependence of κ x , which is similar to previous results about thermal interfaces. − …”

Section: Resultssupporting

confidence: 88%

Hybrid Thermal Transport Characteristics of Doped Organic Semiconductor Poly(3,4-ethylenedioxythiophene):Tosylate

Shiga

et al. 2019

J. Phys. Chem. C

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Understanding thermal transport in doped organic semiconductors would promote the development of flexible electronics and organic thermoelectrics. Temperaturedependent thermal conductivity of poly(3,4-ethylenedioxythiophene) (PEDOT) with different doping concentration is investigated by molecular dynamics simulations in a range of temperature from 200 to 400 K. The thermal conductivity of PEDOT is found to exhibit anisotropy and decrease with the doping concentration. The decomposition analysis of heat current reveals that doped PEDOT shows hybrid thermal transport characteristics including interfacial conduction between dopants and host polymers, lattice conduction in host polymers, and convection of dopants. For heavily-doped PEDOT at 400 K, convection can contribute up to 45% of the cross-plane total thermal conductivity, while host polymers remain in the solid state. The intensification of convection gives rise to positive temperature dependence of thermal conductivity in the cross-plane direction. Our study provides insight into the regulation of thermal transport in doped organic semiconductors.

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Section: Resultssupporting

confidence: 88%

Hybrid Thermal Transport Characteristics of Doped Organic Semiconductor Poly(3,4-ethylenedioxythiophene):Tosylate

Shiga

et al. 2019

J. Phys. Chem. C

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“…TBR is inherent to any interface between two dissimilar materials because of incomplete phonon energy transmission. , Typically, TBR of intimately contacted solid/solid interfaces is above 3 m 2 K GW –1 , ,,− which is equivalent to the thermal resistance of hundreds of nanometers of semiconductor layers (e.g., a ∼500 nm-thick Si layer). Among the different factors that can impact TBR, surface roughness on the order of a few nanometers is usually found to be detrimental to interfacial thermal transport. − However, previous works − have implied that phonons with different characteristic length scales (e.g., wavelength and mean free path) can react to interfacial structures differently.…”

Section: Introductionmentioning

confidence: 99%

Low-Cost Nanostructures from Nanoparticle-Assisted Large-Scale Lithography Significantly Enhance Thermal Energy Transport across Solid Interfaces

Lee

Menumerov

Hughes

et al. 2018

ACS Appl. Mater. Interfaces

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Enhancing thermal energy transport across solid interfaces is of critical importance to a wide variety of applications ranging from energy systems and lighting devices to electronics. Nanoscale surface roughness is usually considered detrimental to interfacial thermal transport because of its role in phonon scattering. In this study, however, we demonstrate significant thermal conductance enhancements across metal-semiconductor interfaces by as much as 90% higher than that of the planar interfaces using engineered nanostructures fabricated by Au nanoparticle (NP)-assisted lithography, where self-assembled Au NPs are used as an efficient etching mask to pattern solid substrates over large surface areas. The enlarged interfacial contact area due to the presence of nanostructures is the main reason for the significantly enhanced thermal transport. It is further demonstrated that the conductance can be systematically tuned over a wide range through the use of the Au NP self-assembly process that is regulated by a sacrificial Sb layer whose thickness determines the size and density of the nanostructures produced. This strategy is tested on two technologically important semiconductors, Si and GaN, and their interfacial thermal conductance with Al being measured using the time-domain thermoreflectance technique. Moreover, the nanostructured interfaces can maintain the enhanced conductance for a temperature range of 30-110 °C-the operating temperatures commonly experienced by energy, lighting, and electronic devices. Our results could provide a wafer-scale and low-cost strategy for improving the thermal management of these devices.

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“…Thermal transport across interfaces is an important issue for microelectronics, photonics, and thermoelectric devices, and has been studied both experimentally and theoretically recently (Swartz and Pohl, 1989;Zhu et al, 2010;Cahill et al, 2014;Wu et al, 2016;Zheng et al, 2016). Generally, the interfacial thermal conductance (ITC) is used to evaluate the physical properties of thermal transport in devices and materials (Yang et al, 2012), such as composites (Nan et al, 1997;Deng et al, 2017) superlattices (Dresselhaus et al, 2007), thin-film multilayers (Cahill et al, 2000), nanoscale devices (Goodson and Ju, 1999;Han et al, 2015), and nanocrystalline materials (Soyez et al, 2000). Therefore, a deep understanding and an accurate prediction of ITC are crucial to improve the design and performance of various devices and materials.…”

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confidence: 99%

A Modified Theoretical Model to Accurately Account for Interfacial Roughness in Predicting the Interfacial Thermal Conductance

Zhang

Zang

et al. 2018

Front. Energy Res.

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The acoustic mismatch model and the diffuse mismatch model (DMM) have been widely used to predict the thermal interface conductance. However, the acoustic mismatch model and the DMM are based on the hypothesis of a perfectly smooth interface and a completely disordered interface respectively. Here, we present a new modified model, named as the mixed mismatch model, which considers the roughness/bonding at the interface. By taking partially specular and partially diffuse transmission into account, the mixed mismatch model (MMM) can predict the thermal interface conductance with arbitrary roughness. The proportions of specular and diffuse transmission are determined by the interface roughness which is described by the interfacial density of states. We show that the predicted results of the MMM match well with the values of molecular dynamics simulation and experimental data.

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Enhancement of Interfacial Thermal Conductance of SiC by Overlapped Carbon Nanotubes and Intertube Atoms

Cited by 9 publications

References 41 publications

Hybrid Thermal Transport Characteristics of Doped Organic Semiconductor Poly(3,4-ethylenedioxythiophene):Tosylate

Hybrid Thermal Transport Characteristics of Doped Organic Semiconductor Poly(3,4-ethylenedioxythiophene):Tosylate

Low-Cost Nanostructures from Nanoparticle-Assisted Large-Scale Lithography Significantly Enhance Thermal Energy Transport across Solid Interfaces

A Modified Theoretical Model to Accurately Account for Interfacial Roughness in Predicting the Interfacial Thermal Conductance

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