Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers

Rodrigues, Joana; Fialho, M.; Magalhães, S.; Correia, M. R.; Rino, L.; Alves, E.; Neves, A.J.; Lorenz, K.; Monteiro, T.

doi:10.1016/j.jlumin.2016.05.018

Cited by 7 publications

(20 citation statements)

References 54 publications

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“…Thus, a similar effect may have occurred in the present samples, resulting in the formation of additional optically active defects emitting in the yellow spectral region. Concerning the UV/blue bands, different features were found for the used implantation temperatures, in a similar way to what was previously identified in other Al x Ga 1-x N samples [18,29]. In the case of AlN samples, wide unstructured emission bands are commonly attributed to oxygen-related defects , with maxima in the near-UV (~400 nm; ~3.1 eV), and native defects peaked at the blue spectral region (~480 nm; ~2.58 eV) [30][31][32].…”

Section: Low Temperature Steady-state Plsupporting

confidence: 83%

“…As mentioned in the introduction, previous studies in Tb-implanted Al x Ga 1-x N samples [16,17] revealed that the ions tend to preferentially occupy substitutional cation sites (substitutional fraction ~ 63 % and 70 %, for RT and 550 ºC implantation temperatures, respectively), with only small fractions slightly displaced from the regular site or randomly distributed in the matrix. For Tb 3+ ions in such a local environment (C 3v coordination symmetry), the degeneracy of the ion multiplets is broken by the crystalline field of the host and a state with J=6, 5 or 4 is expected to split in a total of nine, seven or six energy levels, respectively [29,33].…”

Section: Low Temperature Steady-state Plmentioning

confidence: 99%

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Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb

Rodrigues

Fialho

Magalhães

et al. 2019

Journal of Luminescence

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Al x Ga 1-x N (x=0.20) layers grown on (0001) sapphire substrates by metal organic chemical vapour deposition were implanted with terbium (Tb) ions at 150 keV with a fluence of 7×10 14 Tb cm -2 at different temperatures. After thermal annealing, all the layers evidenced the Tb-related 5 D 4 -7 F J intra-4f 8 transitions, demonstrating an enhancement of their intensity with increasing implantation temperature. A detailed spectroscopic analysis of the optical properties of these layers was conducted using luminescence techniques. An atypical behaviour for the relative intensity of both the broad visible bands and the intraionic lines was found as a function of temperature and its origin is discussed based on potential fluctuation phenomena and energy transfer processes. The 5 D 4 -7 F J intra-4f 8 transitions exhibit thermal population with increasing temperature between ~100 K and ~200 -230 K, with a subsequent decrease up to RT due to further competitive non-radiative recombination paths. The values calculated for the population energies of each sample are in well agreement with the ones obtained for the activation energies of the de-excitation of the yellow broad band also present in the spectra, suggesting a correspondence between the host defect de-excitation processes and the population of the ion emitting levels.

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Section: Low Temperature Steady-state Plsupporting

confidence: 83%

Section: Low Temperature Steady-state Plmentioning

confidence: 99%

Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb

Rodrigues

Fialho

Magalhães

et al. 2019

Journal of Luminescence

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“…Thus, by annealing AlxGa1-xN (x > 0) NWs at 1200 ℃, it is not expected to strongly damage the GaN NW template, as it is protected by the AlxGa1-xN top-section [57]. Similar annealing conditions were reported to successfully achieve the recovery of the lattice damage introduced by the implantation and the optical activation of RE 3+ ions in III-N layers [66,67] and nanostructures [26][27][28].…”

Section: Methodsmentioning

confidence: 74%

“…For Al0.5Ga0.5N-1200, CL and PL spectra show nearly identical luminescence response, while for AlxGa1-xN-1200 (with x = 0.3 and 0.75), these spectra exhibit similar shape with slightly different peaks' resolution and energy, which can be associated with compositional fluctuations in the NWs and different resolution of both techniques. Alloy disorder and/or compositional fluctuations felt by the RE ions also contribute to the increase of the broadening of the 5 D0 → 7 F2 emission [18,51,67]. A tentative representation of the spectral shape evolution with the AlN nominal content is shown in Fig.…”

Section: Above and Below Bandgap Excitation: The 5 D0 → 7 F2 Transitionmentioning

confidence: 99%

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Cardoso

Jacopin

Faye

et al. 2021

Applied Materials Today

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In this work, Eu 3+ -implanted and annealed AlxGa1-xN (0 ≤ x ≤ 1) nanowires (NWs) grown on GaN NW template on Si (111) substrates by plasma-assisted molecular beam epitaxy are studied by µ-Raman, cathodoluminescence (CL), nano-CL, and temperature-dependent steady-state photoluminescence. The preferential location of the Eu 3+ -implanted ions is found to be at the AlxGa1-xN top-section. The recovery of the as-grown crystalline properties is achieved after rapid thermal annealing (RTA). After RTA, the red emission of the Eu 3+ ions is attained for all the samples with below and above bandgap excitation. The 5 D0 → 7 F2 transition is the most intense one, experiencing a redshift with increasing AlN nominal content (x) from GaN to AlN NWs. Moreover, AlN nominal content and annealing temperature alters its spectral shape suggesting the presence of at least two distinct optically active Eu 3+ centers (Eu1 and Eu2). Thermal quenching of the Eu 3+ ion luminescence intensity, I, is found for all the samples from 14 K to 300 K, being the emission of Eu 3+ -implanted AlN NWs after RTA at 1200 ℃ the most stable (I300 K/I14 K ~80%). The GaN/AlN interface in this sample is also found to have a key role in the Eu 3+ optical activation.

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“…16,17 In fact, this approach is needed since the optical activity of the implanted RE ions is only achieved by thermal treatments. 18 Additionally, during the implantation the damage can be reduced using implantation angles that allow the channeling of the implanted ions, decreasing the first knock-on collisions or using relatively high temperatures during the process. Several works on GaN showed that the implantation damage can be reduced with channeled implantation geometry [19][20][21][22][23][24] and with high temperature implantation.…”

mentioning

confidence: 99%

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho

Magalhães

Chauvat

et al. 2016

Journal of Applied Physics

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Al x Ga 1-x N (x ¼ 0.15 and 0.77) films, grown by halide vapor phase epitaxy, were implanted with 300 keV Tm ions. Implantation damage accumulation is investigated with Rutherford backscattering spectrometry/channeling (RBS/C), transmission electron microscopy (TEM), and high resolution X-ray diffraction (XRD). Distinct damage behavior for samples with different AlN contents was found. Surface nanocrystallization occurs for samples with x ¼ 0.15, similar to implantation effects observed in GaN. Samples with x ¼ 0.77 approach the behavior of AlN. In particular, surface nanocrystallization is suppressed and the depth range of the stacking fault network, typical for implanted III-nitrides, is decreased. The crystalline quality of the sample with x ¼ 0.15 was investigated to compare random and channeled implantation, showing less concentration of damage but with a higher range for channeled implantation. Surprisingly, the strain field caused by the implantation reaches much deeper into the sample than the defect profiles measured by RBS/C and TEM. This is attributed to the fact that XRD is much more sensitive to low defect densities caused by ions which are channeled to deep regions of the sample. Published by AIP Publishing.

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Analysis of the Tb3+ recombination in ion implanted Al Ga1−N (0≤x≤1) layers

Cited by 7 publications

References 54 publications

Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb

Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb

Eu3+ optical activation engineering in Al Ga1-N nanowires for red solid-state nano-emitters

Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

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