Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Fialho, M.; Magalhães, S.; Chauvat, Marie-Pierre; Ruterana, P.; Lorenz, K.; Alves, E.

doi:10.1063/1.4966120

Cited by 10 publications

(14 citation statements)

References 51 publications

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“…Also, after each processing stage, there are no visible Q x shift of the Al x Ga 1-x N and GaN peak position, which indicates that implantation does not introduce notable strain along the a-axis of the crystal lattice. It is in agreement with previous reports [8,[22][23][24]. The high-temperature annealing resulted in a remarkable lattice recovery; however, some residual с-lattice extension is still observed in both the GaN and Al x Ga 1-x N layers ( Fig.…”

Section: Resultssupporting

confidence: 93%

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The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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Compositionally graded Al x Ga 1-x N alloys with the Al concentration in the (7 ≤ x ≤ 32) range were implanted with Ar + ions to study the structural and strain changes (strain engineering). It was shown that ion implantation leads to ~0.3…0.46% hydrostatic strains and a relatively low damage of the crystal structure. The ion-implantation leads mainly to an increase of the density of point defects, while the dislocation configuration is almost unaffected. The density of microdefects is sufficiently reduced after the postimplantation annealing. The structural quality of the Al x Ga 1-x N layers strongly depends on the Al concentration and is worsen with increasing Al. The implantation induced structural changes in highly dislocated Al x Ga 1-x N layers are generally less pronounced. Based on the X-ray diffraction, a model is developed to explain the strain field behavior in the Al x Ga 1-x N/GaN heterostructures by migration of point defects and strain field redistribution. The approach to simulate 2θ/ω scans using statistical dynamical theory of X-ray diffraction for implanted compositionally graded structures AlGaN has been developed.

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Section: Resultssupporting

confidence: 93%

“…The accumulation of implantation damage in Al x Ga 1-x N alloys was also investigated in Ref. [8] for Al 0.15 Ga 0.85 N and Al 0.77 Ga 0.23 N layers implanted under random and channeled geometries with Tm + ions. The damage level was shown to be lower for channeling implantation, and like in Ref.…”

Section: Introductionmentioning

confidence: 99%

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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“…The total defect density is expected to be lower when implantation is performed along the c-axis than for the implantation with a certain angle to the c-axis due to the reduced probability for direct collisions with the lattice atoms. 56 Thus, a distinct interaction between Eu 3+ and the existing defects may occur, accounting for the observed changes in Eu1 and Eu2 PL intensity ratio for different implantation geometries. Similarly, trivalent erbium ions were found on substitutional sites for implantation along the c-axis, while they were displaced from this site for implantation with a certain angle to the c-axis.…”

Section: ■ Results and Discussionmentioning

confidence: 95%

“…In the previous study, the implantation was performed at an angle of 45° to the NWs’ growth axis (for the same fluence). The total defect density is expected to be lower when implantation is performed along the c -axis than for the implantation with a certain angle to the c -axis due to the reduced probability for direct collisions with the lattice atoms . Thus, a distinct interaction between Eu 3+ and the existing defects may occur, accounting for the observed changes in Eu1 and Eu2 PL intensity ratio for different implantation geometries.…”

Section: Resultsmentioning

confidence: 99%

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Cardoso

Correia

Vermeersch

et al. 2022

ACS Appl. Nano Mater.

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Europium (Eu)-implanted AlN nanowire (NW) p–n junctions, subjected to rapid thermal annealing at 1000 °C, were investigated in view of application as red light-emitting diodes (LEDs). In a first step, the structural and optical properties of NWs implanted with two different fluences (1 × 1014 cm–2 and 5 × 1014 cm–2) were studied. The luminescence of the trivalent Eu ions (Eu3+) was achieved for both samples using below and above AlN bandgap energy excitation. The excitation below the AlN bandgap occurs through two broad bands, A1 (peaked at ∼270 nm) and A2 (peaked at ∼367 nm), associated with lattice defects. In addition to Eu3+ luminescence, other radiative channels linked to deep-level defects were identified in photoluminescence (PL). The cathodoluminescence (CL) relative intensity ratio between intra-ionic and defect-related emissions increases compared to that of PL. In both PL and CL, the Eu3+ luminescence intensity increases about three times for the highest fluence, while the contribution from radiative recombination at defects decreases. This study also allowed to map an in-depth profile of the optically active Eu3+, revealing that it extends deeper than the range predicted by Monte Carlo simulations. Based on these findings, a proof-of-concept red LED is shown using the NWs implanted with the highest fluence. The devices exhibited the typical rectifying behavior of a p–n junction and an electroluminescence signal dominated by the 5D0 → 7F2 transition (∼624 nm) starting at a threshold voltage of 12 V. The demonstration of red LEDs based on Eu-implanted AlN NWs highlights the potential of such an approach for developing multi-color nano-emitters.

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“…However, in general, to understand the mechanisms of growth defects appearance and damage formation in materials irradiated with energetic ions the various additional analytical techniques are necessary, such as transmission electron microscopy, ion and electron Rutherford backscattering spectrometry, Raman spectroscopy, X‐ray photoelectron spectroscopy, small‐angle X‐ray scattering, positron annihilation spectroscopy etc. . Applications of these techniques provide the unique possibilities to study radiation effects in wide range of implantation depths and gain the information, complementary to X‐ray diffraction investigations, on defect configurations and their phase composition, as well as amorphization and recrystallization processes in ion‐implanted layers.…”

Section: Discussionmentioning

confidence: 99%

Dynamical X‐ray diffraction theory: Characterization of defects and strains in as‐grown and ion‐implanted garnet structures

Olikhovskii

Molodkin

Skakunova

et al. 2017

Physica Status Solidi (b)

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The generalized dynamical theory of X-ray diffraction by imperfect single crystals is extended to characterize structure imperfections of real single crystals with complex basis and similar crystalline films with inhomogeneous strain fields. The influence of various defects (intrinsic and extrinsic point defects, nanoclusters, and microdefects), simultaneously presented in such structures, on changing both average and fluctuating strain fields as well as structure factors are taken into account. The analytical expressions connecting immediately the coherent and diffuse components of the scattering intensity with statistical characteristics of these defects are obtained. Thus, the self-consistent description of the coherent and diffuse dynamical diffraction intensity components is provided. Some examples of the application of the developed theoretical model to treat rocking curves measured from various garnet structures by using high-resolution double-crystal X-ray diffractometer are reviewed. Possibilities for the quantitative characterization of structural defects and strain profiles in the as-grown and ion-implanted garnet single crystals and yttrium iron garnet films are demonstrated.The self-consistent dynamical description of coherent and diffuse scattering intensities from imperfect crystal structures with inhomogeneous strain fields and randomly distributed defects make it possible to determine the parameters of strain profiles and statistical characteristics of defects by analytical treating the coherent and diffuse components of rocking curves measured by the high-resolution double-crystal X-ray diffractometer with widely open detector window.

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Impact of implantation geometry and fluence on structural properties of AlxGa1-xN implanted with thulium

Cited by 10 publications

References 51 publications

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Europium-Implanted AlN Nanowires for Red Light-Emitting Diodes

Dynamical X‐ray diffraction theory: Characterization of defects and strains in as‐grown and ion‐implanted garnet structures

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