Analysis of the Interlayers in a Ferromagnet/Insulator Junction by Inelastic Electron-Tunneling Spectroscopy

純一郎, 村井; 康夫, 安藤; 展規, 手束; 照宣, 宮崎

doi:10.3379/jmsjmag.22.573

Cited by 11 publications

(2 citation statements)

References 7 publications

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“…7 This spectroscopic technique, when applied to MTJs, detects spindependent excitations, including impurity scattering 8,9 and magnon excitation. The d 2 V / dI 2 -V measurement is well known in inelastic electron tunneling ͑IET͒ spectroscopy as a powerful method to detect various sorts of elementary excitations at tunnel-junction interfaces.…”

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confidence: 99%

Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

Ando

Miyakoshi

Oogane

et al. 2005

Applied Physics Letters

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We report a detailed spin-dependent tunneling spectroscopy in single-crystal Fe(001)∕MgO(001)∕Fe(001) magnetic tunnel junctions (MTJs) that show a giant tunnel magnetoresistance effect. Spectra for antiparallel magnetic configurations show asymmetry because of extrinsic electron scatterings caused by structural defects at the barrier/electrode interfaces. Surprisingly, spectra for parallel magnetic configurations exhibit a complex oscillatory structure that has never been observed in conventional MTJs with an aluminum-oxide tunnel barrier. The complex spectra reflect the tunneling process via interface resonant states. These results provide some information that helps to elucidate the physics of spin-dependent electron tunneling and to further enhance magnetoresistance.

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confidence: 99%

Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

Ando

Miyakoshi

Oogane

et al. 2005

Applied Physics Letters

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“…It is reported that in Al/Al-oxide/Al junctions, an Al phonon peak appeared at 0.03 V and the Al-O longitudinal optical (LO) mode appeared 0.12 V [17]. It is conjectured that the peak which appeared by electrical breakdown is not due to electron scattering from the Al phonon and the Al-O LO mode.…”

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Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction

Horikiri

Shiiki

2008

IEEE Trans. Magn.

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Inelastic electron tunneling spectra of metal/AlO x /metal junctions were measured at 77 K. For as-made samples up to 0.3 V, the only observable peak occurred near 0.04 V. After electrical breakdown induced both by a ramped voltage stress and by a constant voltage stress, a peak appeared near 0.09 V. It is thought that a conduction level, which is about 0.09 eV higher than the Fermi level, was created in AlO x by the electrical breakdown. The breakdown is not thought to be due to a simple short circuit caused by a pinhole or the like.

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Estimation of oxidation states of AlOx barriers in a tunneling junction by inelastic electron tunneling spectroscopy

2009

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Analysis of the Interlayers in a Ferromagnet/Insulator Junction by Inelastic Electron-Tunneling Spectroscopy

Cited by 11 publications

References 7 publications

Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

Spin-dependent tunneling spectroscopy in single-crystal Fe∕MgO∕Fe tunnel junctions

Appearance of a Tunneling Spectrum Peak by Electrical Breakdown of Tunneling Junction

Estimation of oxidation states of AlOx barriers in a tunneling junction by inelastic electron tunneling spectroscopy

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