Analysis of the Fano in diamond

Pruvost, F.; Deneuville, A.

doi:10.1016/s0925-9635(00)00378-2

Cited by 92 publications

(78 citation statements)

References 16 publications

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“…For a high quality single crystal diamond, the Raman spectrum is dominated by a single sharp line at 1332 cm À 1 , whose full-width at half-maximum (FWHM) is approximately 2 cm À 1 , which corresponds to inelastic scattering of the laser light by the triply degenerate optical phonon at the Brillouin zone centre. In B-doped diamond films, both polycrystalline and homoepitaxial, the diamond Raman line displays increasing asymmetry and shifts to lower frequency with increasing B concentration [12,14,15]. The Raman spectrum of heavily B-doped diamond exhibits not only a pronounced asymmetry and downshift of the ''1332 cm À 1 '' Raman line, but also two broad bands centred at approximately 500 cm -1 and 1225 cm À 1 and another one of small intensity centred at approximately 1000 cm À 1 [14,16,17].…”

Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

“…The frequency position, o, and the full width at half maximum, G, of the peaks are reported in Table 1. The asymmetric broadening and the downshift of the one-phonon Raman line of B-doped diamond observed both in polycrystalline and in homoepitaxial samples [14][15][16]19], have been explained as the result of a Fano-type discrete-continuum interaction between the discrete zone-centre phonon state and the continuum of the electronic states induced by the presence of the dopant [15,17,19,20]. Moreover, dopant incorporation at substitutional or interstitial sites can produce stress that generally depends on the doping level.…”

Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

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Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Faggio

Messina

Santangelo

et al. 2012

Journal of Quantitative Spectroscopy and Radiative Transfer

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a b s t r a c tThanks to its exceptional physical and electronic properties, diamond is an attractive material for electronic devices working at high temperature and in harsh chemical environment. Its use as a semiconducting material for electronics is related to the possibility of doping it in order to control its conductivity. Semiconducting p-type diamond films can be grown when boron is introduced into the film. In this work, boron-doped (B-doped) homoepitaxial diamond films are grown by Microwave Plasma Enhanced Chemical Vapor Deposition. Raman and electrical characterizations are carried out on the films as a function of boron doping level. As the boron content increases, we observe systematic modifications in the Raman spectra of single-crystal diamonds. A significant change in the lineshape of the first-order Raman peak, as well as a wide and structured signal at lower wavenumbers, appears simultaneously in samples grown with higher boron content. A single crystal diamond Schottky diode based on a metal/intrinsic/p-type diamond junction is analysed.

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Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

Section: Raman Characterization Of B-doped Diamond Filmsmentioning

confidence: 99%

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Faggio

Messina

Santangelo

et al. 2012

Journal of Quantitative Spectroscopy and Radiative Transfer

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“…Recently, several papers have reported on the structural properties of NCD films, as revealed by Raman spectroscopy in low [33][34][35] and in high boron doped diamond films. [35][36][37][38] The characteristic Fano resonance behavior was observed for heavily doped NCD films. 39 However, a comprehensive study on the electronic properties has not yet been published.…”

Section: Introductionmentioning

confidence: 99%

“…39 However, a comprehensive study on the electronic properties has not yet been published. Some data can be found in articles focused on the NCD structure 25,37 or in a recently published work on the superconductivity of boron-doped nanocrystalline diamond. 39 In this work we have systematically investigated the structural, electronic, and optical properties of NCD films with boron concentrations from 10 16 cm -3 up to 10 21 cm -3 .…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of boron-doped nanocrystalline diamond films

et al. 2009

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We report on the electronic and optical properties of boron-doped nanocrystalline diamond (NCD) thin films grown on quartz substrates by CH 4 /H 2 plasma chemical vapor deposition.Diamond thin films with a thickness below 350 nm and with boron concentration ranging from 10 17 cm -3 to 10 21 cm -3 have been investigated. UV Raman spectroscopy and AFM have been used to assess the quality and morphology of the diamond films. Hall effect measurements confirmed the expected p-type conductivity. At room temperature, the conductivity varies from 1.5x10 -8 Ω -1 cm -1 for a non-intentionally doped film up to 76 Ω -1 cm -1 for a heavily B-doped film. Increasing the doping level results in a higher carrier concentration while the mobility decreases from 1.8 cm 2 V -1 s -1 down to 0.2 cm 2 V -1 s -1 . For NCD films with low boron concentration, the conductivity strongly depends on temperature. However, the conductivity and the carrier concentration are no longer temperature-dependent for films with the highest boron doping, and the NCD films exhibit metallic properties. Highly doped films show superconducting properties with critical temperatures up to 2K. The critical boron concentration for the metal-insulator transition is in the range from 2x10 20 cm -3 up to 3x10 20 cm -3 . We discuss different transport mechanisms to explain the influence of the grain boundaries and boron doping on the electronic properties of NCD films. Valence band transport dominates at low boron concentration and high temperatures, 2 whereas hopping between boron acceptors is the dominant transport mechanism for boron doping concentration close to the Mott transition. Grain boundaries strongly reduce the mobility for low and very high doping levels. However, at intermediate doping levels where hopping transport is important, grain boundaries have a less pronounced effect on the mobility. The influence of boron and the effect of grain boundaries on the optoelectronic properties of the NCD films are examined using spectrally resolved photocurrent measurements and photothermal deflection spectroscopy. Major differences occur in the low energy range, between 0.5 -1.0 eV, where both Boron impurities and the sp 2 carbon phase in the grain boundaries govern the optical absorption.

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“…These spectral characteristics are consistent with heavily borondoped films. 33 The band at ϳ1200 cm −1 peak appears to drastically increase in intensity for samples with higher boron concentrations ͑i.e., 4000 and 6467 ppm͒. Bernard et al 34 proposed that these peaks have originated from the local vibrational modes of boron pairs reportedly formed in BDD films.…”

Section: B Raman Spectroscopymentioning

confidence: 96%

Ex situ variable angle spectroscopic ellipsometry studies on chemical vapor deposited boron-doped diamond films: Layered structure and modeling aspects

Gupta

Dudipala

Williams

et al. 2008

Journal of Applied Physics

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Field emission from single-, double-, and multi-walled carbon nanotubes chemically attached to silicon J. Appl. Phys. 111, 044326 (2012) Ceasing of voltage switching amongst graphitic shells in multiwalled carbon nanotubes: A route toward stability Appl. Phys. Lett. 100, 043505 (2012) Directly grown large area single-walled carbon nanotube films with very high sensitivity to normal pressure J. Appl. Phys. 111, 023502 (2012) Magnetoresistance of nanocarbon materials based on carbon nanotubes Low Temp. Phys. 37, 819 (2011) Characterization of the electrical contact between a conductive atomic force microscope cantilever and a carbon nanotube J. Appl. Phys. 110, 054305 (2011) Additional information on J. Appl. Phys. We report the optical property measurements on boron-doped diamond ͑BDD͒ films which were synthesized by microwave plasma-assisted chemical vapor deposition technique on Si ͑100͒ using methane in high hydrogen dilution and trimethylboron as precursors with varying boron concentration such that ͓B͔ / ͓C͔ gas = 100, 500, 1000, 2000, 4000, and 6467 ppm. These BDD films were investigated using a rotating analyzer variable angle spectroscopic ellipsometry ͑SE͒ from the near IR to UV range ͑830-193 nm͒. By applying the conventional Bruggeman effective medium approximation and linear regression analyses to the raw SE data that is, ͓ ͑ i ͒ , ⌬͑ i ͔͒ and pseudodielectric function ͑͗ r ͑ i ͒͘ , ͗ i ͑ i ͒͒͘, we determined the most appropriate model fit. The SE modeling was performed through the normal and point-by-point fit methods combined with the coupled and uncoupled bulk and surface layer approaches providing the details about the thin films' microstructure in terms of the ͑a͒ multilayer ͑component and surface͒ structure and component layer thickness of the films, ͑b͒volume fraction of constituents ͓f sp 3 C , f sp 2 C and void ͑f v ͒ in the component layer͔, ͑c͒ inhomogeneity of the structure along the growth axis and its variation with boron concentration, and ͑iv͒ surface roughness layer thickness ͑d s ͒ with dimensions less than the optical wavelength that is not otherwise available. A simplified three-layer structural model consisting of an interfacial layer, an intermediate ͑or bulk͒ layer, and a top surface roughness layer has been proposed, which simulates the ellipsometry data reasonably well with coupled point-by-point method. An estimator, i.e., mean squared error ͑ 2 ͒, is used to assess the accuracy of the model fit. The results ͑surface roughness and constituents' fraction͒ obtained through SE modeling are also compared with those from atomic force microscopy ͑AFM͒ and Raman spectroscopy to validate the layered model employed. Typically, high surface roughness values around 6 nm were found for films grown under different boron concentrations which is almost five times smaller than determined from AFM. In this context, we determined an approximate linear relationship between these two variables. The relatively smaller surface roughness for BDD films indicates the combined role of b...

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Analysis of the Fano in diamond

Cited by 92 publications

References 16 publications

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Raman scattering in boron-doped single-crystal diamond used to fabricate Schottky diode detectors

Electronic and optical properties of boron-doped nanocrystalline diamond films

Ex situ variable angle spectroscopic ellipsometry studies on chemical vapor deposited boron-doped diamond films: Layered structure and modeling aspects

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