Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications

Zeghdar, Kamal; Dehimi, L.; Pezzimenti, F.; Megherbi, M.L.; Corte, Francesco G. Della

doi:10.1007/s11664-019-07802-6

Cited by 12 publications

(6 citation statements)

References 46 publications

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“…In particular, a mesh spacing down to 0.5 nm is imposed around the MOSFET p-n junctions and within the channel region. For the models in Table 2, all the reference parameters are reported in recent papers of ours focused on different 4H-SiC-based devices and supported by experimental results [14,[33][34][35][36][37][38].…”

Section: Model Expressionsupporting

confidence: 60%

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

et al. 2021

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A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

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Section: Model Expressionsupporting

confidence: 60%

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

et al. 2021

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“…In recent literature, many papers have dealt with the electrical characterization of Mo/4H-SiC Schottky contacts for power electronics [ 63 , 64 , 65 , 66 , 67 ], highlighting the possibility of achieving a barrier height value as low as 1.010 eV and an ideality factor of 1.045 [ 65 ]. As reported in those studies, the Mo/4H-SiC behaved as an inhomogeneous contact, with the current conduction dominated by a TE mechanism and a slight discrepancy from the ideal behavior explained either according to the Werner and Güttler [ 21 ] or the Tung model [ 17 ].…”

Section: Schottky Contacts To N-type 4h-sicmentioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

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“…7,21,22 A recent study by Zeghdar et al reported spatial inhomogeneity in the diode and temperature dependence of Schottky barrier height and ideality factor of a Mo/4H-SiC interface assuming a Gaussian distribution of the barrier height. 23 It is evident that TiN thin films are promising as contacts for SiC-based SBDs. In addition, the concept of multi-layer contacts is also attractive for these applications.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts

Akshara

Rajaram

Krishna

2021

Journal of Elec Materi

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The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is reported. The films were deposited using a single composite target of Si and graphite by magnetron sputtering. The formation of the 21H polytype of SiC was confirmed by x-ray diffraction. The devices were fabricated on single-crystal Si substrates, and electrical properties with TiN and Au/TiN as top lateral contacts were investigated. The rectifying nature, temperature (in the range 300-423 K), and top electrode work function dependence of Schottky parameters were investigated. The room-temperature turn-on voltages for the TiN and Au/TiN top contacts were 8.9 V and 12.8 V, respectively. The ideality factor decreased while the barrier height increased with an increase in temperature. The barrier height for different temperatures was in the range of 1.16-0.82 eV and 0.9-0.77 eV for TiN and Au/TiN interfaces with SiC, respectively. The presence of TiC x N y on the surface of the TiN-SiC-Si-Au device at high temperatures observed using Raman spectroscopy revealed the inhomogeneity due to variation in local interfacial structure. It was demonstrated that the 21H-SiC-based thin film Schottky barrier diodes are a promising alternative for many applications.

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Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications

Cited by 12 publications

References 46 publications

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Materials and Processes for Schottky Contacts on Silicon Carbide

Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts

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