Analysis of the effect of finite d.c. blocking capacitance and finite d.c. feed inductance on the performance of inverse Class-E amplifiers

Mury, T.; Fusco, V.F.

doi:10.1049/ip-cds:20050243

Cited by 14 publications

(7 citation statements)

References 12 publications

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“…The value of the inductance L can Table I. The main difference between inverse class E topology discussed in [2] and the topology in Fig. 1 is the placing of the capacitor C s .…”

Section: B Design Of the Resonatormentioning

confidence: 98%

“…The latter can improve the efficiency of the monolithic microwave IC (MMIC), since smaller inductance values usually gives less electrical series resistance (ESR). Also, the small inductance values lead to physically small inductors that do not consume so much space on chip [2].…”

Section: Class E and Inverse Class E Amplifiermentioning

confidence: 99%

“…The usability of classic linear amplifier circuits is limited especially in portable devices due to their low efficiency. Switching amplifiers, such as class E [1] and inverse class E circuits [2], have been investigated due to their higher efficiency and are considered very tempting alternatives to classical amplifier circuits. In wireless communications the need for high output power is clear and in class E this means very high peak currents and voltages appearing at the drain or collector.…”

Section: Introductionmentioning

confidence: 99%

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Integrated 1.6 GHz, 2W Tuned RF Power Amplifier

2008

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This paper demonstrates a tuned power amplifier designed to operate at 1.6 GHz frequency. The basis of the design is inverse class E topology where the DC block is placed in a new position so that the blocking capacitor can be smaller. Further, very high currents flowing into the output resonator had to be taken into account in the design process of a integrated circuit (IC). Wide inductor lines and multi-finger, high-Q capacitors were used to reduce the losses and maximize the current capability of the resonator. The implemented Gallium Arsenide (GaAs) IC delivers about 2 W of output power with drain efficiency of ca. 56 %.

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“…The value of the inductance L can Table I. The main difference between inverse class E topology discussed in [2] and the topology in Fig. 1 is the placing of the capacitor C s .…”

Section: B Design Of the Resonatormentioning

confidence: 98%

Section: Class E and Inverse Class E Amplifiermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integrated 1.6 GHz, 2W Tuned RF Power Amplifier

2008

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“…Therefore, relatively small timing errors in the input signal may make the nonzero parts of the waveforms to overlap in the time domain, rapidly degrading the efficiency. An example of a switching amplifier is the class E, where zero-voltage switching (ZVS) or as in the inverse class E, zero-current switching (ZCS) is employed [2].…”

Section: A Delay In Class E Casementioning

confidence: 99%

Effects of input routing in switched RF amplifiers

Hietakangas

Typpö

Rahkonen

2008

2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits

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This paper discusses the effects of unequal signal delays in the input network of a multi-finger transistor in a switching RF power amplifier. In a design that employs a distributed transistor, the driving signal must be delivered to each transistor finger by conductor segments that usually are unequal in length. The effects of the consequent non-simultaneous switching are demonstrated with three simulation examples performed with ADS circuit simulator at the frequency of 1.6 GHz, showing significant efficiency degradation when the input trace lengths to the individual transistor fingers differ from each other. An additional cause of highly increased timing differences and non-simultaneous switching is the signal dependent gate capacitance that changes the loading of the signal trace and affects to the signal delays. It is suggested that either tree-like input traces or suitably positioned second harmonic trap should be used to maximize the efficiency and to ensure good driving signal delay match to all fingers of the switching transistor.

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“…Different configurations of PAs were found to have high efficiency. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The Class-E amplifier has the potential in portable wireless communication systems owing to its 100% efficiency. The Class-E amplifier with shunt capacitance has advantages such as design simplicity and high-efficiency operation.…”

Section: Introductionmentioning

confidence: 99%

Employing inverse Class‐E power amplifier series output filter in parallel Doherty power amplifier

Sheikhi

Hemesi

Grebennikov³

2022

Micro & Optical Tech Letters

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In this paper, a Doherty power amplifier based on an inverse Class-E amplifier with a series output filter are presented. The proposed inverse Class-E amplifier has been designed and simulated using lumped elements and transmission lines (TL), respectively. The high-performance simulation results of TL inverse Class-E PA with an output power of 46.2 dBm, peak drain efficiency of 71%, and a power gain of 27 dB at an input power 18 dBm have been obtained. Finally, the Doherty power amplifier (DPA) based on the inverse Class-E power amplifier with some asymmetry in two paths has been designed and implemented. Implementation of both carrier and peaking amplifiers with an inverse Class-E load network can provide an increase in the efficiency and improvement of harmonic suppression levels. Maximum drain efficiencies of 69.3% and 54% at maximum output power level (50 dBm) and 7-dB back-off power level (43 dBm) have been measured, respectively.

show abstract

Analysis of the effect of finite d.c. blocking capacitance and finite d.c. feed inductance on the performance of inverse Class-E amplifiers

Cited by 14 publications

References 12 publications

Integrated 1.6 GHz, 2W Tuned RF Power Amplifier

Integrated 1.6 GHz, 2W Tuned RF Power Amplifier

Effects of input routing in switched RF amplifiers

Employing inverse Class‐E power amplifier series output filter in parallel Doherty power amplifier

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