Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs

Yoshimi, M.; Takahashi, Minoru; Wada, T.; Kato, Koichi; Kambayashi, S.; Kemmochi, M.; Natori, Kenji

doi:10.1109/16.57164

Cited by 90 publications

(29 citation statements)

References 23 publications

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“…At any given , the 30-nm devices exhibit higher because of their higher and lower threshold voltage No observable parasitic source/drain resistance induced current pinching at low has been observed in the 30-nm devices. Interestingly, while the family of curves for the 100-nm device shows almost ideal saturation behavior, that of the 30-nm device shows a tendency of a soft breakdown at V. Similar [10] phenomena have been observed in SOI devices [9], in which higher drain field occurs in devices with thinner channel layers.…”

Section: Resultssupporting

confidence: 69%

Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

Jin

Kwok

Wong

1999

IEEE Electron Device Lett.

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Abstract-High-performance, low-temperature processed thinfilm transistors (TFT's) with ultrathin (30-nm) metal induced laterally crystallized (MILC) channel layers were fabricated and characterized. Compared with the MILC TFT's with thicker (100 nm) channel layers, the ones with the 30-nm channel layers exhibit lower threshold voltage, steeper subthreshold slope, and higher transconductance. Furthermore, the comparatively lower off-state leakage current and the higher on-state current of the "thin" devices also imply a higher on/off ratio. At a drain voltage of 5 V, an on/off ratio of about 3 2 10 7 was obtained for the 30-nm TFT's, which is about 100 times better than that of the 100-nm TFT's. No deliberate hydrogenation was performed on these devices.

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Section: Resultssupporting

confidence: 69%

Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

Jin

Kwok

Wong

1999

IEEE Electron Device Lett.

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“…However, these structures introduce high source/drain series resistance which limits the on-state current. It was reported previously that the electric field can be reduced in thin film SO1 MOSFETs by using a thick drain structure, resulting in higher breakdown voltage [3]. However, no previous work has been reported on the effect of the thick drain structure on the leakage current in TFT devices.…”

Section: Introductionmentioning

confidence: 97%

“…TFT devices made with thinner film have the advantages of lower grain boundary trap density, higher mobility, and higher on-state current compared to thicker film devices [l]. However, thinner film devices experience higher electric field due to two dimensional effect arises froim the reduced junction depth compared to thicker film devices [2,3]. The anomalous leakage current in TFTs is a function of channel electric field and number of grain boundary traps in the polysilicon film.…”

Section: Introductionmentioning

confidence: 99%

On The Leakage Current Mechanism In Non-uniform Film Polycrystalline Silicon TFTs

Kumar¹,

Sin²,

Kwok³

1997

Proceedings of the Fourth Asian Symposium on Information Display

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Leakage current mechanism in polysilicon TFTs fabricated on a non-uniform film is investigated. The approach utilizes test structures which have non-uniform film thickness at the drain, source and channel regions. An order of magnitude reduction in leakage current at high drain bias is observed in the thick drain TFT structure compared to the thin drain structure. The improvement on the leakage current is due to the reduction in electric field at the thicker drain. The electric field reduction in the thick drain structure is verified using two-dimensional simulations. The influence of the electric field on the anomalous leakage current is investigated with the grain boundary trapping effects separated out.

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“…However, there is no consensus whether or not hot-carrier immunity is deteriorated in UTB SOI devices. An analytical model [7] and device simulation results [8] have shown that the thinning of silicon film brings about an increase of drain electric field and lowers the drain breakdown voltage. However, the experimental results in Ref.…”

Section: Introductionmentioning

confidence: 98%

Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs

Jang

et al. 2008

Solid-State Electronics

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Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs

Cited by 90 publications

References 23 publications

Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers

On The Leakage Current Mechanism In Non-uniform Film Polycrystalline Silicon TFTs

Hot-carrier effects as a function of silicon film thickness in nanometer-scale SOI pMOSFETs

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