Analysis of the depth profile of Fe-Si buried layers in Fe+-implanted Si wafer by soft X-ray emission spectroscopy

Galakhov, V. R.; Kurmaev, E.Z.; Shamin, S. N.; Elokhina, L. V.; Yarmoshenko, Yu. M.; Бухараев, А. А.

doi:10.1016/0169-4332(93)90045-d

Cited by 14 publications

(5 citation statements)

References 8 publications

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“…The use of electron impact excitation for the Si L 2,3 XES at different accelerating voltages in the x-ray tube allows us to probe different layers of the target because of the pronounced dependence of the electron range and therefore of the depth of origin of the x-rays as a function of the electron excitation energy [23]. It has been shown that the use of both modes (high-energy resolution and depth-profiling analysis) provides in-depth profile estimations of different phases in Si-containing materials [17,18]. Given this opportunity we analysed the local structure of porous and spark-processed silicon as functions of the depth.…”

Section: Methodsmentioning

confidence: 99%

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X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

Kurmaev

Shamin

Galakhov

et al. 1997

J. Phys.: Condens. Matter

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The paper presents a comparison of x-ray emission spectra of porous silicon (P-Si) and of spark-processed silicon (sp-Si). Both types of Si structure display strong photoluminescence in the visible range of the spectrum. Porous samples were prepared by anodization of and Si wafers. Whereas for the P-Si processed from Si the presence of some amorphous silicon is detected, the x-ray emission spectra of porous Si prepared from Si display a higher content of . For spark-processed Si the x-ray emission spectra reveal a much stronger degree of oxidation which extends to depths larger than 10 000 Å. Furthermore, the chemical state of silicon atoms of sp-Si measured at the centre of the processed area is close to that of silicon dioxide, and depends slightly on the emission maximum. Specifically, green-photoluminescing sp-Si shows a higher degree of oxidation than the blue-luminescing specimen. However, the depth of oxidation consistently decreases for areas with weak photoluminescence and without photoluminescence. Possible origins for the photoluminescence are discussed.

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Section: Methodsmentioning

confidence: 99%

“…Thus, the present paper reports on investigations of the local electronic structure of porous and spark-processed silicon utilizing x-ray emission spectroscopy. It has been shown that this technique is very sensitive to the chemical bonding and its modification under different sample treatments in Si-containing materials [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

Kurmaev

Shamin

Galakhov

et al. 1997

J. Phys.: Condens. Matter

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“…On the other hand, measurements of the Si L 2,3 XES at different electron exciting energies can be used for the nondestructive depth-profiling phase analysis, because of a pronounced dependence of the x-ray yield on the electron excitation depth. With this method, we have constructed depth profiles of elements and phases within interfaces [10]. We used this method for characterization of interfaces in Fe + -implanted Si [10], W/Si multilayers [11], Si 3 N 4 thin films irradiated by an excimer laser [6], and Hf/Si and Ir/Si systems after thermal annealing [12,13].…”

Section: Introductionmentioning

confidence: 99%

“…With this method, we have constructed depth profiles of elements and phases within interfaces [10]. We used this method for characterization of interfaces in Fe + -implanted Si [10], W/Si multilayers [11], Si 3 N 4 thin films irradiated by an excimer laser [6], and Hf/Si and Ir/Si systems after thermal annealing [12,13].…”

Section: Introductionmentioning

confidence: 99%

The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

Kurmaev

Shamin

Galakhov

et al. 1997

J. Phys.: Condens. Matter

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The system exposed to irradiation with 11 - 12 MeV electrons was studied by soft-x-ray emission spectroscopy using the variable-exciting-electron-energy, optical ellipsometry, and nuclear reaction techniques. For the system prepared on an n-substrate, oxidation of Si was observed, and the thickness of the layer after electron irradiation was estimated. For the system prepared on a p-Si substrate, irradiation-induced oxidation was not observed. It was found that preliminary boron implantation in the -Si system blocks oxidation of the n-Si substrate exposed to electron irradiation.

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“…5 The SiL2>3 bands of W/Si multilayers in dependence of the temperature of thermal treatment (at 250, 500, 650, 750, and 1000 °C) are present in Fig. The sensitivity of such analysis to different phase formation is determined by the energy resolution of the SiL2>3 emission band.…”

Section: Resultsmentioning

confidence: 99%

Characterization of W/Si multilayers by ultrasoft x-ray emission spectroscopy

et al. 1995

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The SiL2j3 emission spectra of amorphous W/Si multilayers were measured. For the as-deposited samples the SiL2>3 emission spectra have been found to be very close to that of amorphous Si. The formation of WSi2 phase during annealing of W/Si multilayers at a temperature >50 °C was detected. From the SiL2>3 emission spectra of as-deposited and annealed samples, the amount of W/Si2 phase was estimated. It is shown that this technique can be used for quantitative estimation of the ratio of amorphous Si and WSi2 phases in W/Si multilayers.

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Analysis of the depth profile of Fe-Si buried layers in Fe+-implanted Si wafer by soft X-ray emission spectroscopy

Cited by 14 publications

References 8 publications

X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

X-ray emission spectra and the effect of oxidation on the local structure of porous and spark-processed silicon

The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

Characterization of W/Si multilayers by ultrasoft x-ray emission spectroscopy

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