The influence of high-energy electron irradiation and boron implantation on the oxide thickness in the /Si system

Abstract

The system exposed to irradiation with 11 - 12 MeV electrons was studied by soft-x-ray emission spectroscopy using the variable-exciting-electron-energy, optical ellipsometry, and nuclear reaction techniques. For the system prepared on an n-substrate, oxidation of Si was observed, and the thickness of the layer after electron irradiation was estimated. For the system prepared on a p-Si substrate, irradiation-induced oxidation was not observed. It was found that preliminary boron implantation in the -Si system blocks oxidation of the n-Si substrate exposed to electron irradiation.

Formation of Si nanocrystals in ion implanted Si-SiO2structures by MeV electron irradiation

“…We assume that the MeV electron irradiation breaks Si-O bonds and the free oxygen atomes move through radiation defects, so that Si nanostructures are generated in the SiO 2 . This is in good agreement with our earlier results [7][8][9] where we showed that oxygen accumulates at the SiO 2 -Si interface. We also assume that the radiation defects (created by the MeV electron irradiation) act as a source for Si nanostructures generation in the SiO 2 .…”

X-ray fluorescence study of organic-inorganic polymer conversion into ceramics induced by ion irradiation

“…The precipitation of Si nanoparticles was observed in earlier XES measurements of semiconducting Si 3 N 4 and SiO 2 films induced by excimer laser and electron beam irradiation. 29,30,7 C. Compositional and structural changes during annealing Figure 6 displays the measurements of carbon K␣ XES of PTES films after annealing at 1000°C, and after combined treatments of irradiation and annealing. One observes that the annealing of the unirradiated PTES films modifies the fine structure of the carbon K␣ XES, revealing some spectral features that are typical for spectra of sp 2 hybridized graphite ͑see Fig.…”

RBS Investigation of Ion Implanted SiSiO2 Structures Irradiated with 20 MeV Electrons

“…Previously, we investigated the influence of 11–20 MeV electron irradiation on the electrophysical characteristics of metal‐oxide‐silicon (MOS) structures 1–4. It was shown that high‐energy electron irradiation creates additional interface states at the SiSiO 2 interface and additional charge in the oxide, and decreases the oxide capacity of the samples.…”

“…Preliminary ion implantation of the samples with a dose of 10 12 cm −2 blocks this process. Utilizing a nuclear reaction technique it has been demonstrated that electron irradiation also leads to an increase in the oxygen surface density 4. On the other hand, Klimenko et al5 demonstrated that high‐dose 200 eV electron irradiation (5 × 10 15 cm −2 ) of implanted SiSiO 2 structures reduces the oxygen content of the SiO 2 layer.…”