Analysis of the carrier conduction mechanism in 100 MeV O7+ ion irradiated Ti/n-Si Schottky barrier structures

Chourasiya, Hemant K.; Kulriya, P.K.; Panwar, Neeraj; Kumar, Sandeep

doi:10.1016/j.nimb.2019.01.045

Cited by 6 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thereafter, its value decreased and a value of 2.6 is observed at 1 × 10 13 ions cm −2 . The barrier inhomogeneity at the interface and the high series resistance also leads to non-ideal behavior in Si Schottky barrier structures [7,25]. However, the behavior of I-V curves at a higher bias (V > 0.4 V) cannot be explained by thermionic emission considering the series resistance effect in this case.…”

Section: Resultsmentioning

confidence: 98%

See 1 more Smart Citation

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

Chourasiya¹,

Kulriya²,

Panwar³

et al. 2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

The understanding of the influence of energetic ions on the transport properties of semiconductor materials is essential to design the devices for use in a radiation environment. In this article, an in-situ investigation of the effect of 100 MeV O 7+ irradiation on the current-voltage characteristics of the Pd/n-Si Schottky barrier structure is carried out. It is observed that the interface barrier parameters (ideality factor, Schottky barrier height and reverse saturation current) are a strong function of ion fluence. The voltage dependence of the conduction mechanisms indicates the presence of defects near the interface as well as in bulk silicon. The energy loss mechanisms of energetic ions in the Pd/n-Si structure are used to explain the observed results after irradiation.

show abstract

Section: Resultsmentioning

confidence: 98%

“…In particular, Pd/n-Si Schottky barrier structures have been used as a hydrogen sensor [5,6]. The MS contacts also work as a research tool to study the properties of materials [7][8][9][10]. So, it is really important to get the knowledge of the MS interface barrier formation and modification mechanisms for desired device operations.…”

Section: Introductionmentioning

confidence: 99%

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

Chourasiya¹,

Kulriya²,

Panwar³

et al. 2020

Semicond. Sci. Technol.

Self Cite

View full text Add to dashboard Cite

show abstract

Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures

Kılçık

Berk

Seymen

et al. 2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Current-Voltage Characteristics of 4 MeV Proton-Irradiated Silicon Diodes at Room Temperature

Bodunrin

Moloi

2022

Silicon

View full text Add to dashboard Cite

Analysis of the carrier conduction mechanism in 100 MeV O7+ ion irradiated Ti/n-Si Schottky barrier structures

Cited by 6 publications

References 22 publications

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures

Current-Voltage Characteristics of 4 MeV Proton-Irradiated Silicon Diodes at Room Temperature

Contact Info

Product

Resources

About

Analysis of the carrier conduction mechanism in 100 MeV O7+ ion irradiated Ti/n-Si Schottky barrier structures

Cited by 6 publications

References 22 publications

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

In-situ study of electrical transport in Pd/n-Si under high energy ion irradiation

Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures

Current-Voltage Characteristics of 4 MeV Proton-Irradiated Silicon Diodes at Room Temperature

Contact Info

Product

Resources

About

Analysis of the carrier conduction mechanism in 100 MeV O7+ ion irradiated Ti/n-Si Schottky barrier structures