Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO2/n-Si structures: optoelectronic situations

“…Figure 2 shows the I-V curves of Au/SiO 2 /n-Si semiconductor structure in various illumination densities and at room temperature. In the thermionic emission (TE) theory of semiconductor structures [11], if the series resistance is Rs and the applied voltage is V, thus the current I-V is written as follows [11,[16][17][18][19][20][21][22][23][24][25][26][27];…”

“…Production process of Au/SiO 2 /n-type Si semiconductor structures are like follows: Firstly, chemical cleaning process (RCA) was performed on the n-type Si semiconductor. The RCA chemical cleaning is detailed in [16][17][18][19][20][21][22][23][24][25][26]. After first step, by using a thermal evaporation method (at 2.0 × 10 −7 Torr) and Au metal, an ohmic contact was created to the reverse side of a silicon wafer.…”

“…These remarkable developments have therefore opened new possibilities for the advancement of optoelectronic devices. From our previous studies [16][17][18][19][20][21][22][23][24][25][26], we have been examined light-dependent situations of the p-type Si or n-type Si structures with GO based NiO/PVA, PTCDA, GO, PTCDA:GO, GO:P 3 C 4 MT, and CdO interface. Contrary to previous studies [16][17][18][19][20][21][22][23][24][25][26], in this study, the illumination-dependent electrical, light sensitivity and photo-detection properties of Au/SiO 2 /n-Si structures were investigated.…”

Elevated barrier height originated from electric dipole effect and improved breakdown characteristics in PtOx/β-Ga2O3 Schottky barrier diodes

“…So far the source of high Schottky barrier height for PtO x /β-Ga 2 O 3 SBD is divergent, which may be related to increasing work function or electric dipole effect of Schottky electrode [22,[27][28][29][30][31]. For the influence of these factors, precise measurements are needed to determine whether it has a critical impact on the barrier height [32][33][34][35]. Furthermore, the reported breakdown voltage values of PtO x /β-Ga 2 O 3 SBDs are relatively low [23,36], and there is a lack of statistical analysis for the breakdown voltages.…”

Novel Structure, Electric and Dielectric Properties of PPy-PANI-GO-MWCNTs Composite/MnO2/Fe3O4/n-Si Structure

“…Therefore, the presence of such thin layers may contribute to interface state charge and bias. 5 Some of these organic compounds, such as pyrrole, thiophene, aniline, and others, can be electrochemically polymerized into films with metallic characteristics. Of these, polypyrrole (PPy) is expected to be an excellent candidate material for electron devices, such as Schottky or p-n junction diodes.…”