Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography

Hernández-Saz, Jesús; Herrera, M.; Alonso-Álvarez, D.; Molina, S. I.

doi:10.1186/1556-276x-7-681

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…The position of the QDs has been considered as the geometric center of the QDs in the tomogram. Figure 9.13 [ 10 ] shows some HAADF-STEM images of an InAs/GaAs QD stack that is contained in the prepared needle-shaped specimen, obtained at different tilting angles. About the vertical alignment of the QDs, in Fig.…”

Section: Electron Tomography Of Inas/gaas Needle-shaped Specimensmentioning

confidence: 99%

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Fabrication of Needle-Shaped Specimens Containing Subsurface Nanostructures for Electron Tomography

Hernández-Saz

Herrera

Molina

2013

Lecture Notes in Nanoscale Science and Technology

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This chapter describes the use of the focused ion beam instrument for the fabrication of needle-shaped specimens containing specifi c subsurface features of a sample. These specimens are useful for the analysis of isolated features of a material by different characterization techniques, among other applications. We show the application of this methodology in the fi eld of semiconductor materials, in particular for the analysis by electron tomography of InAs/InP-and InAs/GaAs-capped quantum dots. The proposed methodology allows the correlation of the structural properties of isolated objects located inside the material with their functional properties, avoiding the interference with other features in the material. IntroductionNowadays, the development of advanced materials with applications in nanotechnology relies not only on the ability to design and fabricate these materials but also on the capability to fully characterize their structural and functional properties. Generally, these structures are characterized in bulk, where information from the material as a whole is obtained. However, often it is useful to investigate isolated objects in the material, avoiding the interference from other features of the structure. As an example, the experimental analysis of the effect of size, shape, and arrangement of silver nanoparticles on the electromagnetic fi elds induced by their localized

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Section: Electron Tomography Of Inas/gaas Needle-shaped Specimensmentioning

confidence: 99%

“…The results are shown in Fig. 9.14 [ 10 ]. Figure 9.14a shows a general view of the needle, including the upper QD stack and the Pt deposition.…”

Section: Electron Tomography Of Inas/gaas Needle-shaped Specimensmentioning

confidence: 99%

Fabrication of Needle-Shaped Specimens Containing Subsurface Nanostructures for Electron Tomography

Hernández-Saz

Herrera

Molina

2013

Lecture Notes in Nanoscale Science and Technology

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“…During the epitaxial growth, the strain fields of the buried QDs have a large influence in the formation of the subsequent layer as it determines the nucleation sites of the incoming stacked QDs [ 7 , 8 ]. The complex strain fields around a QD can produce vertical or inclined alignments [ 9 , 10 ], anti-alignments [ 11 ], or random distributions of the QDs [ 12 ], having a strong effect on the optoelectronic behaviour [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

et al. 2013

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The finite elements method (FEM) is a useful tool for the analysis of the strain state of semiconductor heterostructures. It has been used for the prediction of the nucleation sites of stacked quantum dots (QDs), but often using either simulated data of the atom positions or two-dimensional experimental data, in such a way that it is difficult to assess the validity of the predictions. In this work, we assess the validity of the FEM method for the prediction of stacked QD nucleation sites using three-dimensional experimental data obtained by atom probe tomography (APT). This also allows us to compare the simulation results with the one obtained experimentally. Our analysis demonstrates that FEM and APT constitute a good combination to resolve strain–stress problems of epitaxial semiconductor structures.

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Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

et al. 2016

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Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography

Cited by 3 publications

References 31 publications

Fabrication of Needle-Shaped Specimens Containing Subsurface Nanostructures for Electron Tomography

Fabrication of Needle-Shaped Specimens Containing Subsurface Nanostructures for Electron Tomography

Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness

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