2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) 2013
DOI: 10.1109/pvsc.2013.6745107
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Analysis of temperature-dependent current-voltage characteristics for CIGSSe and CZTSSe thin film solar cells from nanocrystal inks

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Cited by 8 publications
(2 citation statements)
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“…This means that part of the space charge region extends into the buffer layer; see equation (7). The tunneling energy for light curves is slightly higher than the tunneling energy measured in thin film CZTSSe cells (E 00 = 41.5 meV) [27] and is an indication that the carrier concentration in our CZTS is quite high; see equation (6). Therefore, the series resistance R S of our cell is also fairly low, i.e.…”
Section: Temperature Dependence Of I-v Characteristicsmentioning
confidence: 74%
“…This means that part of the space charge region extends into the buffer layer; see equation (7). The tunneling energy for light curves is slightly higher than the tunneling energy measured in thin film CZTSSe cells (E 00 = 41.5 meV) [27] and is an indication that the carrier concentration in our CZTS is quite high; see equation (6). Therefore, the series resistance R S of our cell is also fairly low, i.e.…”
Section: Temperature Dependence Of I-v Characteristicsmentioning
confidence: 74%
“…Over the last decades, the alloys of Cu (In 1‐x , Ga x )Se 2 (CIGS) have been considered important semiconductor light absorbers for thin‐film photovoltaics and correspondingly low‐cost technology [25], which can be used for efficient conversion of solar energy into electricity [26] with high absorption coefficients ranging from 105normalcnormalm1 ${10}^{5}{\mathrm{c}\mathrm{m}}^{-1}$ to 2.9×105normalcnormalm1 $2.9\times {10}^{5}{\mathrm{c}\mathrm{m}}^{-1}$ [27], a direct band‐gap energy of 1.04 eV [28, 29], high mobility of minority carrier electrons µe=3000.25emto0.25em7000.25emnormalcnormalm2V1s1 ${{\upmu }}_{e}=300\,\text{to}\,700\,{\mathrm{c}\mathrm{m}}^{2}{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and holes µh=100.25emto0.25em300.25emnormalcnormalm2V1s1 ${\mu }_{h}=10\,\text{to}\,30\,{\mathrm{c}\mathrm{m}}^{2}{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ [30], and low toxicity [25]. These types of materials have been used in solar cells based on polymers, PSCs, ternary hybrid solar cells [26], and classic crystalline photovoltaic materials (Si and GaAs) [31]. The effective masses of electron and hole, electron affinity, and ionization energy of CuInSe 2 are 0.09m o and 0.76m o , −4.48 eV, and −5.52 eV, respectively [32].…”
Section: Introductionmentioning
confidence: 99%