Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

Mitani, Y.; Kasai, D.; Horio, K.

doi:10.1109/ted.2003.809039

Cited by 22 publications

(8 citation statements)

References 16 publications

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“…Basic equations to be solved are Poisson's equation including ionized deep-level terms and continuity equations for electrons and holes including a carrier generation rate by impact ionization and carrier loss rates via the deep levels [10], [13], [18], [25]. These are expressed as follows.…”

Section: Physical Modelsmentioning

confidence: 99%

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura

Ueda

Kawada

et al. 2018

IEEE Trans. Electron Devices

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We make a 2-D analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer, and the results are compared with those having a normal SiN passivation layer. As a result, it is found that the breakdown voltage is enhanced particularly in the cases with relatively short field plates because the reduction in the electric field at the drain edge of gate effectively improves the breakdown voltage in the case with the high-k passivation layer. In the case with the moderate-length field plate, the enhancement of breakdown voltage due to the high-k passivation layer occurs because the electric field profiles between the field-plate edge and the drain become more uniform. It is also studied how the breakdown voltage depends on a deep-acceptor density in the Fe-doped semiinsulating buffer layer when a high-k passivation layer is used. It is shown that the breakdown voltage increases with increasing the relative permittivity of the passivation layer ε r and with increasing the deep-acceptor density N DA . When ε r = 60 and N DA = 2-3 × 10 17 cm −3 at the gate length of 0.3 μm, the breakdown voltage becomes about 500 V at a gate-to-drain distance of 1.5 μm, which corresponds to an average electric field of about 3.3 MV/cm between the gate and the drain. Index Terms-2-D analysis, breakdown characteristics, buffer layer, GaN HEMT, high-k passivation layer. I. INTRODUCTION N OWADAYS, AlGaN/GaN HEMTs are attractive for applications to high-power microwave devices and highpower switching devices [1], [2]. It is well known that introducing a field plate enhances the power performance of AlGaN/GaN HEMTs as well as GaAs FETs [3]-[5]. This occurs because by introducing a field plate, the current collapse is reduced [6], [7], and the breakdown voltage increases [8]-[10]. The increase in breakdown voltage occurs because the electric field at the drain edge of gate is reduced by introducing a field plate.

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Section: Physical Modelsmentioning

confidence: 99%

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Kabemura

Ueda

Kawada

et al. 2018

IEEE Trans. Electron Devices

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“…Basic equations to be solved are Poisson's equation including ionized deep‐level terms and continuity equations for electrons and holes including a carrier generation rate by impact ionization and carrier loss rates via the deep levels . We treat the drift‐diffusion type analysis, and the carrier generation rate G is given by

G = \frac{(α_{normaln} | J_{normaln} | + α_{normalp} | J_{normalp} |)}{q},

where α n and α p are ionization rates for electrons and holes, respectively, and expressed as

α_{normaln} = A_{normaln} exp (\frac{- B_{normaln}}{| E |}),

α_{normalp} = A_{normalp} exp (\frac{- B_{normalp}}{| E |}),

where E is the electric field.…”

Section: Physical Modelsmentioning

confidence: 99%

“…To mitigate the short-channel effects, a study [18] indicates that an acceptor density in a buffer layer should be higher than 10 17 cm À3 . Basic equations to be solved are Poisson's equation including ionized deep-level terms and continuity equations for electrons and holes including a carrier generation rate by impact ionization and carrier loss rates via the deep levels [9,[19][20][21]. We treat the drift-diffusion type analysis, and the carrier generation rate G is given by…”

mentioning

confidence: 99%

Increase in breakdown voltage of AlGaN/GaN HEMTs with a high‐k dielectric layer

Hanawa

Horio

2014

Physica Status Solidi (a)

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A two‐dimensional analysis of breakdown characteristics in AlGaN/GaN high‐electron‐mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off‐state breakdown voltage on the relative permittivity of the passivation layer ϵr is studied. It is shown that as ϵr increases, the off‐state breakdown voltage increases. This is because the electric field at the drain edge of the gate is weakened as ϵr increases. This occurs because in the insulator the applied voltage tends to drop uniformly in general, and hence when the insulator is attached to the semiconductor, the voltage drop along the semiconductor becomes smoother at the drain edge of the gate if ϵr of the insulator is higher and the effect of the insulator becomes more significant. It is concluded that AlGaN/GaN HEMTs with a high‐k passivation layer should have high breakdown voltages.

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“…Basic equations to be solved are Poisson's equation including ionized deep-level terms, continuity equations for electrons and holes including a carrier generation rate by impact ionization and carrier loss rates via the deep levels [11,17]. These are expressed as follows:…”

Section: Introductionmentioning

confidence: 99%

Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

Onodera

Hanawa

Horio

2016

Phys. Status Solidi C

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Two‐dimensional analysis of off‐state breakdown characteristics of source field‐plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field‐plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field‐plate structure is a little lower than that of the gate field‐plate structure when the field‐plate length is short, because the electric field at the drain edge of the gate becomes higher. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs

Cited by 22 publications

References 16 publications

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Increase in breakdown voltage of AlGaN/GaN HEMTs with a high‐k dielectric layer

Analysis of breakdown characteristics in source field‐plate AlGaN/GaN HEMTs

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