Analysis of SiC IMPATT device in millimeter‐wave frequencies

Meng, Chinchun; Liao, G. R.

doi:10.1002/(sici)1098-2760(19980620)18:3<167::aid-mop2>3.3.co;2-y

Cited by 3 publications

(5 citation statements)

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“…SiC has the advantage of having a high dielectric constant of about 9.7 13 and good wave absorption ability. [14][15][16][17] These diamond structures were used to investigate the microwave absorption ability at the PBG frequencies.…”

Section: Introductionmentioning

confidence: 99%

Microwave Absorption in Photonic Crystals Composed of SiC/Resin with a Diamond Structure

Liu

Kirihara

Miyamoto

et al. 2006

Journal of the American Ceramic Society

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Three‐dimensional photonic crystals were fabricated by infiltrating an epoxy mold with a SiC/polyester mixture. The epoxy molds with normal or inverse diamond structures were formed by stereolithography. The size of the mold was 45 mm × 18 mm × 18mm, and the lattice constant of the photonic crystals was 18 mm. The effects of the epoxy mold type, aspect ratio (the ratio of height and diameter of a diamond lattice rod), and number of sample units on the formation of photonic band gap (PBG) and microwave absorption ability along the 〈100〉 direction were studied. The attenuations of microwave transmission and reflection were measured through the photonic crystal samples at a frequency range of 3–12 GHz with a network analyzer. The results obtained suggest that the combination of the absorbing material SiC and diamond structure has a dual effect to form a PBG with a high absorption ability.

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Section: Introductionmentioning

confidence: 99%

Microwave Absorption in Photonic Crystals Composed of SiC/Resin with a Diamond Structure

Liu

Kirihara

Miyamoto

et al. 2006

Journal of the American Ceramic Society

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“…Models in the TLM software were used to estimate theoretical predictions 23–25 and then compared with experimental measurements. From Fig.…”

Section: Resultsmentioning

confidence: 99%

“…SiC has a high dielectric constant of about 9.7 23 and good wave absorption ability. [24][25][26][27] Various diamond structures with different directions and aspect ratios of the lattice rod were fabricated. The formation of stop and pass bands was investigated by measuring their microwave transmission spectra.…”

Section: Introductionmentioning

confidence: 99%

“…In this study, we have designed and fabricated 3D metallic and metallodielectric photonic crystals by a CAD/CAM stereolithography and successive infiltration process using molten metal with a low melting point and a SiC/polyster slurry. SiC has a high dielectric constant of about 9.7 23 and good wave absorption ability 24–27 . Various diamond structures with different directions and aspect ratios of the lattice rod were fabricated.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Metallodielectric Photonic Crystals with a Diamond Structure and their Microwave Properties

Wang

Kirihara

Miyamoto

et al. 2008

Journal of the American Ceramic Society

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Three‐dimensional (3D) metallodielectric photonic crystals with a diamond structure were fabricated in order to investigate the formation of stop bands and the absorption ability for microwaves with the dielectric absorbing media embedded into the 3D metal lattice. First, the metallic photonic crystals were prepared by filling the epoxy molds formed by stereolithography with a metal alloy having a low melting point of 70°C, followed by removal of the molds. The metallodielectric photonic crystals were then fabricated by infiltrating the porous metal crystal with a SiC/polyester mixture. The lattice constant of photonic crystals was 15 mm. The effects of different aspect ratios of diamond lattice rods, number of metallic lattice units along Γ‐L 〈1 1 1〉, Γ‐X 〈1 0 0〉, and Γ‐K 〈1 1 0〉 directions, and metallodielectric samples along the Γ‐X 〈1 0 0〉 direction on the formation of stop band and microwave absorption ability were investigated in the frequency range from 3 to 30 GHz. Metallodielectric photonic crystals formed showed good absorption ability. The measured transmission spectra of the metallic and metallodielectric crystals agreed well with the simulation of the transmission line modeling method.

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“…Their study however predicted that performances of SiC devices are superior to Si devices under CW mode of operation. In 1998, Meng et al [Meng et al (1998)] carried out a Read-type simulation analysis of p+n Single Drift flat profile MM-Wave IMPATT devices at 800K. The simulation demonstrates that the efficiency (DC power density) for the device is 12.4% (6.7MW cm -2 ), 15% (4.5 MW cm -2 ) and 15.8% (3.3MW cm -2 ) for frequencies of 200, 100 and 50 GHz, respectively.…”

Section: Wbg Semiconductors For Fabricating High-power Impattsmentioning

confidence: 99%

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

Mukherjee¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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Analysis of SiC IMPATT device in millimeter‐wave frequencies

Cited by 3 publications

References 0 publications

Microwave Absorption in Photonic Crystals Composed of SiC/Resin with a Diamond Structure

Microwave Absorption in Photonic Crystals Composed of SiC/Resin with a Diamond Structure

Fabrication of Metallodielectric Photonic Crystals with a Diamond Structure and their Microwave Properties

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

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