Analysis of short circuit current loss in rear emitter crystalline Si solar cell

Abstract

Short circuit current (Jsc) loss in rear emitter crystalline Si solar cell is analyzed in detail by a 2D device simulation and compared with the experimental results. There is a significant loss in Jsc for the rear emitter n-Si solar cell with an n-type doped front surface field (FSF) when the base substrate resistivity is low. It is due to an increase in recombination in the FSF region led by a less barrier height for minority carriers with a lower substrate resistivity. The barrier height less than 0.1 eV causes large loss in Jsc. To achieve higher Jsc for the cells with FSF, the control of the doping concentration in FSF, the substrate thickness, and the barrier height for the minority carriers are important. A rear emitter heterojunction Si solar cell with an amorphous Si passivation layer shows no substrate resistivity dependence on Jsc since an amorphous Si possess a higher barrier height and a long bulk lifetime of more than a few milliseconds.

Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

“…However, J SC is observed to downfall with the increase in carrier concentration. The recombination loss increases as a result of high doping concentration that affect the cell performance and a decrement of J SC occurres from 38.5 to 35.9 mA/cm 2 due to the enhancement of carrier concentration from 10 13 to 10 17 cm −3 ( Hossain et al., 2020 ; Watahiki et al., 2016 ). However, as the series resistance gets lowered at higher carrier concentration, FF rises from 80.37 to 84%.…”

Electronic Structure of In3–xSe4 Electron Transport Layer for Chalcogenide/p-Si Heterojunction Solar Cells

“…It is observed from the table that J SC reduces with the increase of doping density for both the cases. These results are the consequences of recombination losses in the absorber and transport layers due to higher doping. , The change in solar cell parameters due to the variation of doping concentration of In 3– x Se 4 and Si, respectively, is also depicted in Figure S2 in the Supporting Information.…”

Design of an Efficient AgInSe2Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

“…However, at higher carrier concentration, the SRH recombination losses grow up which may result plunge of observed parameters, specially the short-circuit current. [46,47] The impact of defects of In 2 S 3 window has been reconnoitered in this portion and shown in Figure 3c. Herein, the value of defect density has been varied from 10 13 to 10 17 cm À3 .…”

“…However, at higher carrier concentration, the SRH recombination losses grow up which may result plunge of observed parameters, specially the short‐circuit current. [ 46,47 ]…”