Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

Mondal, Bipanko Kumar; Mostaque, Shaikh Khaled; Hossain, Jaker

doi:10.1016/j.heliyon.2022.e09120

Cited by 29 publications

(27 citation statements)

References 54 publications

(78 reference statements)

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“…The reason behind this negative change is the Shockley‐Read‐Hall (SRH) recombination which is predominant at a high defect. [ 50 ]…”

Section: Resultsmentioning

confidence: 99%

“…This is happened due to the WSe 2 BSF layer which is capable to absorb sub-band gap photons through tail-state-assisted (TSA) two-step photon upconversion process. [50,[52][53][54][55][56] This process declared that with the assistance of Urbach tail states, two sub-band gap photons get absorbed in a row. This kinds of upconversion may be occurred in the material with adequate doping, high absorption coefficient and preferable band gap.…”

Section: 3mentioning

confidence: 99%

“…This kinds of upconversion may be occurred in the material with adequate doping, high absorption coefficient and preferable band gap. [50,[52][53][54][55][56] As a result, the value of short circuit current shows the significant positive change due to WSe 2 layer which also performs the role of bottom absorber layer in n-ZnS/p-CZTS/p + -WSe 2 DH thin film solar cell. A detail qualitative explanation about the TSA upconversion process can be found in other work.…”

Section: 3mentioning

confidence: 99%

“…The enhancement of QE is the evidence of enhancement of longer wavelength photon absorption utilizing TSA photon upconversion process in the WSe 2 layer. [50,[52][53][54][55][56] That is why, due to the addition of WSe 2 layer in CZTS thin film solar cell, the shortcircuit current as well as efficiency have been increased tremendously.…”

Section: Variation Of Quantum Efficiency With Wse 2 Bsf Layermentioning

confidence: 99%

“…In one side the TSA photon upconversion is responsible for the improvement of J SC and on the other side generation of higher built-in potential at the ZnS/CZTS and CZTS/WSe 2 interfaces is responsible for the increment of the value of V OC . [50,[52][53][54][55][56]…”

Section: Optimized Performances Of Czts Solar Cellmentioning

confidence: 99%

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Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

et al. 2022

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This article presents an enormously effective Cu 2 ZnSnS 4 (CZTS)-based n-ZnS/p-CZTS/p + -WSe 2 thin film solar cell. The device has been studied by varying the thickness, doping concentration and defect density of each layer utilizing SCAPS-1D simulation software. The power conversion efficiency (PCE) for n-ZnS/p-CZTS single heterojunction is 14.06% with the J SC = 20.26 mA cm −2 , V OC = 0.88 V and FF = 78.59%, respectively. This PCE is elevated to 27.31% with the J SC = 33.72 mA cm −2 , V OC = 0.97 V and FF = 83.75%, respectively due to insertion of WSe 2 back surface field (BSF) layer in the same structure. The significant improvement of PCE mainly depends on short circuit current which is resulted due to WSe 2 layer that absorbs sub-band gap photons through tail-statesassisted (TSA) photon upconversion method. These entire results demonstrate the potential of WSe 2 as BSF layer in CZTS-based thin film solar cells.

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“…The reason behind this negative change is the Shockley‐Read‐Hall (SRH) recombination which is predominant at a high defect. [ 50 ]…”

Section: Resultsmentioning

confidence: 99%

Section: 3mentioning

confidence: 99%

Section: 3mentioning

confidence: 99%

Section: Variation Of Quantum Efficiency With Wse 2 Bsf Layermentioning

confidence: 99%

Section: Optimized Performances Of Czts Solar Cellmentioning

confidence: 99%

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Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

et al. 2022

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A highly efficient n‐CdS/p‐Ag₂S/p⁺‐SnS thin film solar cell: Design and simulation

Ahmed,

Islam,

Pappu

et al. 2024

Engineering Reports

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Silver sulfide (Ag2S) chalcogenide compound can be a viable absorber in the applications of thin film solar cells owing to its optimum bandgap of 1.1 eV and high absorption coefficient. Herein, we propose a novel Ag2S‐based n‐CdS/p‐Ag2S/p+‐SnS double‐heterojunction solar cell. The numerical analysis of the device has been performed with SCAPS‐1D (Solar Cell Capacitance Simulator). In the case of single heterojunction, n‐CdS/p‐Ag2S manifests an efficiency of 19.75%, where VOC = 0.66 V, JSC = 36.99 mA/cm2 and FF = 81.50%. However, Ag2S‐based double‐heterojunction device with optimized structure provides the efficiency of 29.51% with VOC = 0.81 V, JSC = 42.81 mA/cm2 and FF =85.24%. The noteworthy augmentation of VOC and JSC in double‐heterojunction results from the reduction in surface recombination velocity and rise in built‐in voltage in the p‐Ag2S/p+‐SnS hetero‐interfaces that promote the higher efficiency of the device. These theoretical insights indicate a path for fabrication of an efficient Ag2S based thin film solar cell.

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Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

2023

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Herein, AgInSe2 absorber–based n‐In2S3/p‐AgInSe2/p+‐molybdenum disulfide heterojunction thin‐film solar device is numerically explored with the help of SCAPS‐1D software. The major focus of this numerical study is to inquire the performances of the purported solar cell and hence unearth the highest efficiency of the AgInSe2 (AISe) solar cell. Herein, the functions of different parameters like thicknesses, doping and defect density, working temperature, series, and shunt resistances are investigated. The recommended solar cell parades the short‐circuit current density, open circuit voltage, fill factor, and efficiency of 39.11 mA cm−2, 1.10 V, 82.26%, and 35.44%, respectively. It is noteworthy that the efficiency is comparatively higher than the previously reported AISe‐based solar cell. The AgInSe2 semiconductor is easy to fabricate as well as has good electrical properties, therefore this proposed solar cell is highly efficient and cost effective.

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Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

Cited by 29 publications

References 54 publications

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

A highly efficient n‐CdS/p‐Ag₂S/p⁺‐SnS thin film solar cell: Design and simulation

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

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Theoretical insights into a high-efficiency Sb2Se3-based dual-heterojunction solar cell

Cited by 29 publications

References 54 publications

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

Numerical prediction on the photovoltaic performance of CZTS‐based thin film solar cell

A highly efficient n‐CdS/p‐Ag2S/p+‐SnS thin film solar cell: Design and simulation

Design of an Efficient AgInSe2Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Contact Info

Product

Resources

About

A highly efficient n‐CdS/p‐Ag₂S/p⁺‐SnS thin film solar cell: Design and simulation

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell