Analysis of Sb2Se3/CdS based photovoltaic cell: A numerical simulation approach

Lin, Ling-Yan; Qiu, Yu; Fan, Baodian

doi:10.1016/j.jpcs.2018.05.045

Cited by 89 publications

(47 citation statements)

References 12 publications

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“…Toward this end, the band alignment of the CdS/Sb 2 X 3 interface was investigated by several groups. [46,[68][69][70] In 2014, García et al studied the band alignment of CdS/Sb 2 S 3 interface, they indicated that the CBO value of −0.37 eV. [71] Recently, The CBO at the CdS/Sb 2 Se 3 interface was also numerically analyzed by the SCAPS.…”

Section: Cdsmentioning

confidence: 99%

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

et al. 2021

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Antimony chalcogenides, including Sb 2 S 3 , Sb 2 Se 3 , and Sb 2 (S,Se) 3 , have been developed as attractive non-toxic and earth-abundant solar absorber candidates among the thin-film photovoltaic devices. Presently, a record certified power conversion efficiency of 10.5% has been demonstrated for antimony chalcogenide solar cells, which is significantly lower than that of Cu 2 (In,Ga)Se 2 (23.35%) and CdTe (22.1%) thin-film solar cells. The inferior performance in antimony chalcogenide solar cells is mainly owing to a large open-circuit voltage (V OC ) deficit resulted from the defect and interface-assisted recombination. Herein, a comprehensive review on the recent advancements interface band alignment and defect passivation are carried out. This review will provide a solid understanding on the interfaces and defects of antimony chalcogenide solar cells, which is beneficial to the research and development of such kind of solar cells.

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Section: Cdsmentioning

confidence: 99%

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

et al. 2021

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“…The operating temperature is 300 K and the illumination spectrum is global AM 1.5. The material parameters of the device simulation are chosen from the literature [15][16][17][18][19][20][21][22], and summarized in table 1.…”

Section: Numerical Equationsmentioning

confidence: 99%

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Feng

2020

Mater. Res. Express

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A model of the Sb 2 Se 3 solar cell with a hole transport layer (HTL) has been investigated by solar cell capacitance simulator (SCAPS). The influence of different HTLs on device performance has been firstly analyzed, and CuO has been found to be the best HTL. Then, Sb 2 Se 3 thickness, CuO thickness, the doping concentration of CuO, the hole mobility of CuO, the defect density of Sb 2 Se 3 layer, the defect density at the CdS/Sb 2 Se 3 interface, and the work function of metal electrode on device performance have been systematically studied. The optimum thicknesses of Sb 2 Se 3 and CuO are 300 nm and 20 nm, respectively. To achieve ideal performance, the doping concentration of CuO should be more than 10 19 cm −3 , and its hole mobility should be over 1 cm 2 V −1 s −1 . The defect densities in the Sb 2 Se 3 layer and at the CdS/ Sb 2 Se 3 interface play a critical role on device performance, both of which should be as low as 10 13 cm −3 and 10 14 cm −2 , respectively. In addition, the work function of the metal electrode should be more than 4.8 eV to avoid formation of Schottky junction at the metal electrode interface. After optimization, a best efficiency of 23.18% can be achieved. Our simulation results provide valuable information to further improve the efficiency of Sb 2 Se 3 solar cells in practice.

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“…In the last few years, antimony selenide (Sb 2 Se 3 ) semiconductor has received considerable attention as an attractive absorber material in the thin‐film heterojunction photovoltaic device due to its high absorption coefficient (>10 5 cm −1 ), favorable energy bandgap (1–1.2 eV), reasonable carrier mobility, low toxicity, earth‐abundant constituents, inexpensive, low temperature fabrication process, and excellent stability. [ 20–30 ] In the previous works, several experimental [ 20–23,27,31–40 ] and theoretical [ 41–47 ] studies on improving the performances of the Sb 2 Se 3 ‐based solar cells have been reported. There have been numerous experimental Sb 2 Se 3 ‐based heterojunction solar structures, including TiO 2 /Sb 2 Se 3 , [ 18 ] TiO 2 /Sb 2 Se 3 /CuSCN, [ 31 ] CdS/Sb 2 Se 3 , [ 23,32,33,35,36,38–40 ] CdS/Sb 2 Se 3 /PbS, [ 34 ] and CdS/Sb 2 Se 3 /CuSCN, [ 37 ] described to achieve excellent photovoltaic performance.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

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Analysis of Sb2Se3/CdS based photovoltaic cell: A numerical simulation approach

Cited by 89 publications

References 12 publications

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

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Analysis of Sb2Se3/CdS based photovoltaic cell: A numerical simulation approach

Cited by 89 publications

References 12 publications

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting VOC of antimony chalcogenide solar cells: A review on interfaces and defects

Simulation of the Sb2Se3 solar cell with a hole transport layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Contact Info

Product

Resources

About

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Boosting V_OC of antimony chalcogenide solar cells: A review on interfaces and defects

Simulation of the Sb₂Se₃ solar cell with a hole transport layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer