Analysis of quadrature bias-point drift of Mach-Zehnder electro-optic modulator

Svarny, J.

doi:10.1109/bec.2010.5631589

Cited by 20 publications

(6 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As the performance of III-V-based PDs degrades similarly to those of VCSELs when exposed to a high neutron fluence [2], we also report on results from an irradiation test of germanium-silicon (GeSi) PDs for use in radiation-hard TRx. In addition to being used as receivers in SiPh-based TRx, GeSi PDs are required as monitor PDs in control loops for MZMs to ensure a stable operation around the MZM's quadrature point [10].…”

Section: Introductionmentioning

confidence: 99%

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Zeiler

Nasr-storey

Détraz

et al. 2017

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Radiation-hard optical links are the backbone of read-out systems in high-energy physics (HEP) experiments at CERN. The optical components must withstand large doses of radiation and strong magnetic fields and provide high data rates. Radiation hardness is one of the requirements that become more demanding with every new generation of HEP experiment. Previous studies have shown that vertical cavity surface emitting lasers, on which the current optical links are based, will not be able to withstand the expected radiation levels in the innermost regions of future HEP experiments. Silicon photonics (SiPh) is currently being investigated as a promising alternative technology to address this challenge. We irradiated SiPh Mach-Zehnder modulators (MZMs) with different design parameters to evaluate their resistance against ionizing radiation. We confirm that SiPh MZMs with a conventional design do not show a phase shift degradation when exposed to a 20-MeV neutron fluence of 3 • 10 16 n/cm 2. We further demonstrate that custom-designed MZMs with shallow etch optical waveguides and high doping concentrations in their p-n junctions exhibit a strongly improved radiation hardness over devices with a conventional design when irradiated with X-rays. We also found that MZMs withstood higher radiation levels when they were irradiated at a low temperature. In contrast, larger reverse biases during irradiation led to a faster device degradation. Simulations indicate that a pinch-off of holes is responsible for the device degradation. Photodiodes (PDs) were also tested for their radiation hardness as they are needed in silicon photonic transceivers. X-ray irradiation of building-block germanium-silicon PDs showed that they were not significantly affected.

show abstract

Section: Introductionmentioning

confidence: 99%

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Zeiler

Nasr-storey

Détraz

et al. 2017

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…Various bias control schemes have been proposed and can be classified into three types depending on the bias drift extraction methods: output power monitoring method [63,64] , dithering method (or pilot tone method) [50,62,65] , and optical modulation amplitude (OMA) monitoring method [66,67] . The general models of these bias control schemes are shown in Fig.…”

Section: Feedback Bias Controlmentioning

confidence: 99%

“…Different output optical power or different derivative of output optical power corresponds to the different bias points. By building a look-up table, it is easy to identify the current bias point based on the output optical power and compensate for the bias point drift with a phase shifter [63,64] . Fig.…”

Section: Feedback Bias Controlmentioning

confidence: 99%

Towards electronic-photonic-converged thermo-optic feedback tuning

Tan¹,

Ye²,

Ming³

et al. 2021

J. Semicond.

View full text Add to dashboard Cite

As Moore’s law approaching its end, electronics is hitting its power, bandwidth, and capacity limits. Photonics is able to overcome the performance limits of electronics but lacks practical photonic register and flexible control. Combining electronics and photonics provides the best of both worlds and is widely regarded as an important post-Moore’s direction. For stability and dynamic operations considerations, feedback tuning of photonic devices is required. For silicon photonics, the thermo-optic effect is the most frequently used tuning mechanism due to the advantages of high efficiency and low loss. However, it brings new design requirements, creating new design challenges. Emerging applications, such as optical phased array, optical switches, and optical neural networks, employ a large number of photonic devices, making PCB tuning solutions no longer suitable. Electronic-photonic-converged solutions with compact footprints will play an important role in system scalability. In this paper, we present a unified model for thermo-optic feedback tuning that can be specialized to different applications, review its recent advances, and discuss its future trends.

show abstract

“…Since it is commercially available to have modulators with low chirps, chirp with up to 0.2 is considered. Even though the two arms of the MZM are respectively driven by complementary electrical signals, the power imbalance in the two arms (may be due to V drift [20]) can produce chirp. Since the V drift is typically in the range of 1-2 V, producing an overall power imbalance of about 70%, which can result in a chirp value of about 0.2.…”

Section: Architecture and Numerical Analysesmentioning

confidence: 99%

Cost-Effective Mobile Backhaul Network Using Existing ODN of PONs for the 5G Wireless Systems

et al. 2015

View full text Add to dashboard Cite

An optical distribution network (ODN) sharing scheme to integrate mobile backhaul networks with the existing passive optical network (PON) systems is proposed and demonstrated. With the ODN sharing scheme, the expense of building new fibers for the next-generation fifth-generation (5G) mobile backhaul networks can be reduced. As many wavelengths are allocated to the already deployed PON systems, there remain limited wavelengths for the mobile backhaul systems. Hence, to efficiently increase the serving cell sites of the 5G systems, spectral-efficient orthogonal frequency-division multiplexing (OFDM) is adopted in the mobile backhaul systems. In order to reduce the latency of the system, adaptive adjustment of the OFDM signals for different transmission distances is averted. The OFDM signals are transmitted only using specific available bandwidth. The available bandwidth for each wavelength is studied according to the power fading relationship between the transmission distances and the chirp induced from signal modulation. A proof-of-concept demonstration experiment has been performed. In our results, 20.17 Gb/s with a bit error rate (BER) lower than 3:8 Â 10 À3 was realized with a split ratio of 256 and a 40-km transmission distance of the PON ODN. Hence, each wavelength can support about 20, six, and two nodes for the IMT-advanced, current Long-Term Evolution-Advanced (LTE-A) systems, and the expected 5G systems, respectively.

show abstract

Analysis of quadrature bias-point drift of Mach-Zehnder electro-optic modulator

Cited by 20 publications

References 1 publication

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Towards electronic-photonic-converged thermo-optic feedback tuning

Cost-Effective Mobile Backhaul Network Using Existing ODN of PONs for the 5G Wireless Systems

Contact Info

Product

Resources

About