2012
DOI: 10.1063/1.4739469
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Analysis of photocurrents in lateral-geometry organic bulk heterojunction devices

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Cited by 19 publications
(26 citation statements)
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“…Theoretical modeling of lateral BHJ devices under a large reverse voltage bias predicts space charge limited (SCL) transport behavior 11 that has been experimentally confirmed in previous studies. [12][13][14] Due to these large biases, large regions of space charge form adjacent to the electrodes even when the carrier mobilities are similar.…”
Section: Theorysupporting
confidence: 70%
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“…Theoretical modeling of lateral BHJ devices under a large reverse voltage bias predicts space charge limited (SCL) transport behavior 11 that has been experimentally confirmed in previous studies. [12][13][14] Due to these large biases, large regions of space charge form adjacent to the electrodes even when the carrier mobilities are similar.…”
Section: Theorysupporting
confidence: 70%
“…(15) reported in Ref. 11, for the SCL photocurrent in a unipolar lateral device. The modification here arises from the extension to the ambipolar case.…”
Section: 18mentioning
confidence: 87%
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“…1(a)). 12 Lateral devices are of interest because they have a flat photogeneration profile that is amenable to device modeling, they allow for measurements over a wide range of transport length scales, and they enable access to the active region. This letter will demonstrate the utility of in situ potentiometry within lateral devices for evaluating BHJ materials.…”
mentioning
confidence: 99%
“…The magnitude of the photocurrent for devices with DIO is smaller than that for devices without DIO. The magnitude of the photocurrent is dependent on multiple processes including the generation rate and mobility as shown by Ooi et al in addition, it also depends on the extraction at the contacts [34]. The lower photocurrent in the sample with DIO is most likely due to less efficient collection at the electrodes.…”
Section: Resultsmentioning
confidence: 93%