Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Marino, Fabio Alessio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Hove, M. Van; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolò; Meneghesso, Gaudenzio

doi:10.1016/j.sse.2015.05.012

Cited by 6 publications

(3 citation statements)

References 24 publications

(22 reference statements)

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“…The V TH of the three samples from the C-V curves and the transfer curves show the same trend but different values. This is due to the response of deep-level bulk traps in the GaN channel and Al-GaN barriers at different scan speeds [15] .…”

Section: Resultsmentioning

confidence: 99%

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Zhao

Xing

et al. 2018

J. Semicond.

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The leakage current and breakdown voltage of AlGaN/GaN/AlGaN high electron mobility transistors on silicon with different GaN channel thicknesses were investigated. The results showed that a thin GaN channel was beneficial for obtaining a high breakdown voltage, based on the leakage current path and the acceptor traps in the AlGaN back-barrier. The breakdown voltage of the device with an 800 nm-thick GaN channel was 926 V @ 1 mA/mm, and the leakage current increased slowly between 300 and 800 V. Besides, the raising conduction band edge of the GaN channel by the AlGaN back-barrier lead to little degradation for sheet 2-D electron gas density, especially, in the thin GaN channel. The transfer and output characteristics were not obviously deteriorated for the samples with different GaN channel thickness. Through optimizing the GaN channel thickness and designing the AlGaN back-barrier, the lower leakage current and higher breakdown voltage would be possible.

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Section: Resultsmentioning

confidence: 99%

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Zhao

Xing

et al. 2018

J. Semicond.

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“…27,28 During switching operation, in the OFF state (with V GS , V T ), the MIS-HEMT must be able to block a high voltage applied to the drain. [29][30][31] This is the state of greatest concern as it comes to TDDB. The ON-state is more benign since 0 V is applied to the gate, and the drain is under a small bias.…”

Section: Time-dependent Dielectric Breakdownmentioning

confidence: 99%

Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Alamo

Warnock

2017

J. Mater. Res.

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“…These include a space-charge-limited conduction model based on time and temperature dependent transient back-gating measurements, 6,7 band-to-band tunneling, and Poole-Frenkel mechanisms when the electric field is above 10 MV/m based on activation energy analysis. [8][9][10][11] Leakage associated with defects in the buffer layer, presumably along threading dislocations, has also been proposed. 12 As grown, un-intentionally doped (UID) GaN and AlGaN layers typically have a low n-type background doping.…”

Section: Introductionmentioning

confidence: 99%

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Choi

Griffiths

Ren

et al. 2018

Journal of Applied Physics

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Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulatorsemiconductor (MIS) AlGaN/GaN heterostructure HEMTsControl of leakage currents in the buffer layers of GaN based transistors on Si substrates is vital for the demonstration of high performance devices. Here, we show that the growth conditions during the metal organic chemical vapour deposition growth of the graded AlGaN strain relief layers (SRLs) can significantly influence the vertical leakage. Using scanning capacitance microscopy, secondary ion mass spectrometry, and transmission electron microscopy, we investigate the origins of leakage paths and show that they result from the preferential incorporation of oxygen impurities on the side wall facets of the inverted hexagonal pyramidal pits which can occur during the growth of the graded AlGaN SRL. We also show that when 2D growth of the AlGaN SRL is maintained a significant increase in the breakdown voltage can be achieved even in much thinner buffer layer structures. These results demonstrate the importance of controlling the morphology of the high electron mobility transistor buffer layer as even at a very low density the leakage paths identified would provide leakage paths in large area devices.

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Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Cited by 6 publications

References 24 publications

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

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