Analysis of multi-crystalline silicon solar cells at low illumination levels using a modified two-diode model

Effect of Illumination Intensity on Solar Cells Parameters

“…Then it decreases linearly with irradiation between 200 and 1000 W/m 2 . These results are similar to those obtained by Kassis and Saad [16] and Eikelboom and Reinders [1]. …”

“…Fig.4 shows a small change in the series resistance, we can say that it is invariant with respect to light intensity in the range from 160W/m 2 to 1000 W/m 2 . These results are consistent with those found by Kassis and Saad [16] for the same technology and the range of irradiation from 0 to 200 W/m 2 [16], and Chan and Phang [17]. The evolution of the shunt resistance as a function of irradiation between 0 and 200W/m 2 is almost constant.…”

Electrical characterization of a-Si:H(n)/c-Si(p) structure

“…In order to betray the presence of BH inhomogeneity, the temperature dependent ideality factor plot can be examined [13][14][15][16][17][18][19][20]29,[31][32][33][34][35][36]. The ideality factor values are calculated from the slope of forward I-V data in Fig.…”

“…The importance of such studies is to understand the effect of native or deposited insulator layers in MIS type SBDs [10][11][12][13][14][15][16][17][18][19][20]. The formation of device structure strongly effects to the performance and stability of these devices [9].…”

“…In spite of these numerous studies, more work is needed to understand the fundamental characteristics of a-Si:H/c-Si heterojunction diode structures and the key factors required to improve their electronic quality. On the other hand, the interface properties between n-and p-type materials are crucial [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20].…”