Analysis of junction temperatures for groups III–V semiconductor materials of light-emitting diodes

Chen, B. C.; Chen, K. H.; Yu, Jie; Ho, Ching-Yen; Wen, Mao-Yu

doi:10.1007/s11082-017-1015-6

Cited by 5 publications

(1 citation statement)

References 33 publications

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“…Up to now, K of LEDs was mostly regarded to be constant independent of temperature and current (Xi et al 2004, Keppens et al 2008, Meyaard et al 2013, Kim et al 2016, Chen et al 2017. However, this assumption is valid only for the cases of low injection current and a limited temperature range, suggesting that the temperature dependence of K should be considered in determining T j for LEDs operating at high current.…”

Section: Theorymentioning

confidence: 99%

Accurate determination of junction temperature in a GaN-based blue light-emitting diode using nonlinear voltage-temperature relation

Onwukaeme

Choi²,

Ryu

2021

Opt Quant Electron

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We investigate the junction temperature measurements for GaN-based blue light emitting diodes (LEDs) using nonlinear dependence of the forward voltage (V f ) on temperature. Unlike the conventional linear model of the dependence of V f on temperature, the modeling of the temperature dependent V f with a quadratic function showed good agreements with measured data in the temperature range between 20 and 100 o C. Using the proposed quadratic model, the junction temperature and thermal resistance of the measured LED could be accurately determined as the ambient temperature varied. It was observed that the junction temperature increment remained almost unchanged as the ambient temperature increased from 20 to 80 o C, which could be attributed to the interplay between the decrease in series resistance and the increase in non-radiative recombination with increasing temperature. The presented method for accurate determination of the junction temperature is expected to be advantageously employed for the thermal management of high-power LEDs.

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