Analysis of Intrinsic Variability in Phase-Change Memory Switching Originating from Stochastic Nucleation Using Fully Coupled Electrothermal and Phase-Field Models
Abstract:The variability of nonvolatile memory becomes more important as memory capacity increases. This is because, in general, individual device variability increases with scaling down. Using our simulation, we analyzed the intrinsic variability in phasechange memory switching originating from stochastic nucleation for self-heating and heater-based cell architectures. Differential equations of electrothermal and phase-field models were numerically solved in a fully coupled manner to simulate the amorphization and cry… Show more
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