Analysis of internal quantum efficiency and a new graphical evaluation scheme

Hirsch, M.; Rau, Uwe; Werner, Jürgen

doi:10.1016/0038-1101(95)98669-t

Cited by 26 publications

(8 citation statements)

References 2 publications

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“…For crystalline Si, for instance, the quantum efficiency in the wavelength range 780 nm < l < 950 nm is typically used to determine the effective diffusion length of the base layer of the device [26][27][28][29]. For crystalline Si, for instance, the quantum efficiency in the wavelength range 780 nm < l < 950 nm is typically used to determine the effective diffusion length of the base layer of the device [26][27][28][29].…”

Section: Interpretation Of Quantum Efficiency Measurements In Thin-fimentioning

confidence: 99%

Fundamental Electrical Characterization of Thin‐Film Solar Cells

Kirchartz

Ding

Rau

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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Section: Interpretation Of Quantum Efficiency Measurements In Thin-fimentioning

confidence: 99%

Fundamental Electrical Characterization of Thin‐Film Solar Cells

Kirchartz

Ding

Rau

2011

Advanced Characterization Techniques for Thin Film Solar Cells

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“…A separation of bulk and rear surface recombination is not possible by quantum efficiency analysis. When assuming zero surface recombination we deduce, however, a minimum diffusion length L min =(49±5) µm and thus find L > (49±5) µm for the diffusion length of the epitaxial layer [ 13 ]. Similarly we deduce a maximum rear surface recombination velocity S max = (1790±380) cm/s and thus find that S < (1790±380) cm/s.…”

Section: ) Polca Wafer Equivalents From Thementioning

confidence: 83%

Epitaxial Si films carried by thick polycrystalline Si as a drop-in replacement for conventional Si wafers

Brendel

Steckenreiter

Hensen

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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We demonstrate the fabrication wafer equivalent from the gas phase. The demonstrators are 160 µm thick and 9×9 cm 2 in size. They consists of a type monocrystalline epitaxial layer that is carried deposited, 130 µm-thick, p + -type polycrystalline layer in between the epitaxial Si and the polyrear side of the cell and functions as a reflector oxide make the contact to the base and form a PERL side. The wafer bow is (0.3±0.2 mm). The wafer oriented. Optical analysis demonstrates corresponding to a short circuit current density of ( mA/cm 2 from a 22.6 µm-thick epitaxial layer when random pyramids. Small p-type demonstrator solar cells a base saturation current density of (111±20) fA/cm from a quantum efficiency measurement. The (PolCa) wafer equivalent shortcuts the conventional wafer production process, since it avoids crunching and melting of the poly-Si, growing of the ingot and sawing of the wafers.

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“…For α −1 ranging from 5 to 35 μm, the plot yielded an effective diffusion length L eff = 232 μm. From this value, we deduced a lower limit for the bulk diffusion length L > 100 μm and an upper limit for S eff < 1200 cm s −2 [19].…”

Section: Resultsmentioning

confidence: 99%

19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

Petermann

Zielke

Schmidt

et al. 2011

Progress in Photovoltaics

247

146

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We present a both‐sides‐contacted thin‐film crystalline silicon (c‐Si) solar cell with a confirmed AM1.5 efficiency of 19.1% using the porous silicon layer transfer process. The aperture area of the cell is 3.98 cm2. This is the highest efficiency ever reported for transferred Si cells. The efficiency improvement over the prior state of the art (16.9%) is achieved by implementing recent developments for Si wafer cells such as surface passivation with aluminum oxide and laser ablation for contacting. The cell has a short‐circuit current density of 37.8 mA cm−2, an open‐circuit voltage of 650 mV, and a fill factor of 77.6%. Copyright © 2011 John Wiley & Sons, Ltd.

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Analysis of internal quantum efficiency and a new graphical evaluation scheme

Cited by 26 publications

References 2 publications

Fundamental Electrical Characterization of Thin‐Film Solar Cells

Fundamental Electrical Characterization of Thin‐Film Solar Cells

Epitaxial Si films carried by thick polycrystalline Si as a drop-in replacement for conventional Si wafers

19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

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