Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes

Tuğluoğlu, Nihat; Çalışkan, Fatih; Yüksel, Ömer Faruk

doi:10.1016/j.synthmet.2014.10.027

Cited by 12 publications

(9 citation statements)

References 54 publications

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“…5) increases with increasing frequency at a given bias voltage. The capacitance value decreases with increasing frequency because the charge at the interface states cannot follow the ac signal at sufficiently high frequencies [14][15][16][17][18][19][20][21][22][33][34][35][36][37][38][39][40][41][42][43][44]. As can be seen from Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The series resistance can cause a serious error in the extraction of the interfacial properties. To avoid this error, a correction should be applied to the measured admittance before the desired information is extracted [14][15][16][17][18][19][33][34][35][36][37][38][39][40][41][42][43]. The series resistance R s and the interfacial layer capacitance C 0x for the MOS structure can be calculated using the following equations [16]:…”

Section: Tablementioning

confidence: 99%

“…Therefore, the series resistance completely masks interface trap loss, and especially the equivalent parallel conductance is much more sensitive to the series resistance than capacitance. Thus, it can be said that the correction by taking account the series resistance is particularly important in conductance measurements [14][15][16][17][18][19][34][35][36][37][38][39][40][41][42][43]. For the MOS devices, corrected capacitance and equivalent parallel conductance at a given frequency can be written as follows [16]:…”

Section: Tablementioning

confidence: 99%

“…The series resistance effect is clearly apparent in Figs. 7 and 8, and the greatest error in the capacitance occurs in accumulation and a portion of the depletion region [16,[34][35][36][37][38][39][40][41][42][43]. As can be seen, it is not possible to neglect series resistance in every case.…”

Section: Tablementioning

confidence: 99%

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Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Türüt

Karabulut

Ejderha

et al. 2015

Materials Science in Semiconductor Processing

117

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We have studied the admittance and current-voltage characteristics of the Au/Ti/Al 2 O 3 /n-GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance R s. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.

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Section: Resultsmentioning

confidence: 99%

Section: Tablementioning

confidence: 99%

Section: Tablementioning

confidence: 99%

Section: Tablementioning

confidence: 99%

See 2 more Smart Citations

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Türüt

Karabulut

Ejderha

et al. 2015

Materials Science in Semiconductor Processing

117

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“…Therefore, many researchers focused on modification of GaAs MS devices with the organic interlayer to reveal the properties and exact description of current transport mechanism in contacts [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Researchers were used a different type polymeric or non-polymeric organic compounds as an interface layer such as poly(2-methoxy-5-(2/-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) [2], Rhodamine 101 [5], poly (3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) (PEDOT) [6], perylene-monoimide (PMI) [7], Rhodamine-B (RhB) [8], 3,4,9,10-perylene tetra carboxylic dianhydride (PTCDA) [9], octadecylthiol (ODT) [10], N,N′-dimethyl-3,4,9,10-perylene tetra carboxylic diimide (DiMe-PTCDI) [13], dicarboxylic acid derivatives [14], phenol red [15], rubrene [16] and etc.…”

Section: Introductionmentioning

confidence: 99%

The current–voltage and capacitance–voltage characterization of the Au/Methylene Blue/n-GaAs organic-modified Schottky diodes

Akkaya¹

2018

Anadolu University Journal of Science and Technology-a Applied Sciences and Engineering

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We report the electrical properties of the Au/n-GaAs devices with and without thin organic interface layer. Methylene blue (MB) is a heterocyclic aromatic chemical compound with the molecular formula C16H18N3SCl. The MB layer was formed by spin coating technique on chemically cleaned gallium arsenide (GaAs) substrate. The current-voltage (I-V) characteristics of the Au/MB/n-GaAs metal-insulator-semiconductor (MIS) and Au/n-GaAs metal-semiconductor (MS) devices have been investigated at room temperature. The MS and MIS devices I-V characteristics showed a good rectification, and they were analyzed based on the thermionic emission (TE) theory. The ideality factor (n) and the barrier height (Φb (IV)) from the I-V characteristics was determined as 1.131±0.006 and 0.782±0.005 eV for MS device and 1.336±0.057 and 0.950±0.008 eV for MIS device, respectively. A Cheung's method and modified Norde's function has been used to extract the parameters including the (Φb) and the series resistance (RS). Distributions of the interface state density (Dit) of the MS and MIS devices were derived from I-V measurements. Our results indicate that the Au/MB/n-GaAs device had lower interface state density values than the Au/GaAs device. Also non-saturated reverse bias current was investigated by the using a Pole-Frenkel emission model. Furthermore, the optical and morphological properties of MB layer were investigated by the Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV-vis Spectrophotometer (UV-vis). Finally, we showed that, increasing Φb and decreasing Dit and improving electrical parameters of MIS devices indicates that, thin MB interface layer could be prefer for modification of Au/n-GaAs devices.

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Capacitance and Conductance–Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

Yüksel

Kuş

Yıldırım

2016

Journal of Elec Materi

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Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes

Cited by 12 publications

References 54 publications

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

The current–voltage and capacitance–voltage characterization of the Au/Methylene Blue/n-GaAs organic-modified Schottky diodes

Capacitance and Conductance–Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

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