Capacitance and Conductance–Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

Yüksel, Ömer Faruk; Kuş, Mahmut; Yıldırım, Murat

doi:10.1007/s11664-016-4999-y

Cited by 18 publications

(3 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where I 0 is saturation current, n is the diode quality factor, q is the electronic charge, A is the Schottky diode contact area, A* is the effective Richardson constant and is equal to 112 A cm − 2 K − 2 for n-type Si [41,42], T is the absolute temperature in Kelvin. I 0 is the saturation current derived from the straight line intercept of ln I at zero-bias.…”

Section: Determination Of Contact Parameters Of Au/ Cu 2 Wse 4 /N-si Schottky Diodementioning

confidence: 99%

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

Yıldırım

Sarılmaz

Özel

2017

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Section: Determination Of Contact Parameters Of Au/ Cu 2 Wse 4 /N-si Schottky Diodementioning

confidence: 99%

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

Yıldırım

Sarılmaz

Özel

2017

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

“…Conducive polymers have also lately played a significant role in the electronics industry due to their photovoltaic, electroluminescent, and rectifying properties when in contact with metal. Because of their electrical, optical, and dielectric characteristics, several kinds of polymers, including perylene, pentacene, poly (3-octylthiophene), Rhadomine B, poly (o toluidine), polyaniline, polyvinyl alcohol (PVA), polyvinyl pyrrolidine (PVP), and polyvinyl chloride (PVC), have recently been developed [16][17][18][19][20][21][22]. Perylene and its derivatives, which are n-type organic semiconductors, have recently become particularly intriguing due to their electron acceptor and carrier qualities, thermal and optical stability, absorption ability, and excellent fluorescence ability.…”

Section: Introductionmentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

View full text Add to dashboard Cite

Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

show abstract

“…are utilized to fabricate the ZnO thin film layer. Among these methods, spin coating is an inexpensive and easy method to acquire good uniform film behaviors [34,35].…”

Section: Introductionmentioning

confidence: 99%

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Öztürk

2021

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

The light can be detected by various devices such as photoconductors, photodetectors, phototransistors, solar cells and photodiodes, and the light can be employed energy harvesting as well as sensing applications. Various materials can be utilized to raising of the efficiency of light-based devices. In present study, metalsemiconductor (MS) devices with various [6,6]-Phenyl C61-butyric acid methyl ester (PCBM) doped zinc oxide (ZnO) interfacial layer were fabricated for photodiode applications. Commercially purchased PCBM and ZnO were mixed in order to obtain undoped, 3%, 5%, and 10% PCBM doped ZnO interfacial layer for Al/PCBM:ZnO/p-Si devices. The obtained solutions were layered on the p-type silicon (p-Si) substrades by spin coating method. The thermal evaporation technique was utilized to deposit Al metal electrodes both back and front sides. The morphological properties of the fabricated devices were characterized by AFM. The morphological images of the AFM revealed that PCBM doping affected the surface morphology as well as surface roughness of the ZnO layers. I-V measurements were carried out in the dark and under varying illumination conditions for electrical properties. The devices exhibited good rectifying properties at around 10 3 rates, both dark and various illumination conditions, according to I-V graphs. The junction parameters of the produced devices were determined by using thermionic emission, Norde, and Cheung models from the I-V characteristics of the devices. The devices have high ideality factors and these values generally fluctuate with varying PCBM doping amounts. The current transient measurements show that PCBM doping provide increasing in the light response capacity. According to the results, the devices can be employed as photodiode and photodetector applications for the further works in the industry.

show abstract

Capacitance and Conductance–Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

Cited by 18 publications

References 33 publications

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Contact Info

Product

Resources

About

Capacitance and Conductance–Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

Cited by 18 publications

References 33 publications

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Effect of various PCBM doping on the interfacial layer of Al/PCBM:ZnO/p-Si photodiodes

Contact Info

Product

Resources

About

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)