Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Karataş, Şükrü; Altındal, Ş.

doi:10.1016/j.mseb.2005.05.018

Cited by 83 publications

(46 citation statements)

References 29 publications

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“…n is a measure of adherence to the pure thermionic emission theory as it reflects barrier deformation under bias [11]. The zero bias barrier height, is obtained from the reverse saturation leakage current (I S ):…”

Section: Resultsmentioning

confidence: 99%

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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In this study, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80 -480 K.The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I-V barrier height and C-V barrier height were found to be n = 1.10, = 0.85 eV and = 0.96 eV, respectively. increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I-V characteristics that degrade permanently above 300 K. Permanent changes to the C-V characteristics were observed only above 400 K. We also noted a discrepancy in the C-V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the versus temperature curve into two regions with temperature coefficients -6.9×10 -4 eV/K and -2.2×10 -4 eV/K above and below 400 K.

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Section: Resultsmentioning

confidence: 99%

“…Several researchers have studied the electrical characteristics of Au/n-GaAs Schottky diodes and have reported a strong dependence of diode characteristics on temperature [4,7,8,[11][12][13]. Kim et al [14] studied the temperature dependence of Au/n-GaAs I-V characteristics using a semi analytical model in the 83 -323 K temperature range.…”

Section: Introductionmentioning

confidence: 99%

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Tunhuma

Auret

Legodi

et al. 2016

Physica B: Condensed Matter

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“…This feature indicates that the current transport behavior in p-GaP Schottky contacts cannot be explained by the ideal I-V method, namely the TE model, in which the SBHs and ideality factors should be independent of temperature. Such unusual behavior has often been found in III-V compound semiconductor-based Schottky diodes, 19,[23][24][25] since it is related to the barrier height inhomogeneity of contacts. 26 However, the I-V data points do not significantly deviate from linearity in the Richardson plot of ln(I 0 /T 2 ) versus 1000/T (dashed line, Fig.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Song¹,

Kim²,

Kang³

et al. 2016

Journal of Elec Materi

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Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow-green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; U B ) on the work function of metals (U M ). In this work, SBHs and their dependence on U M at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dU B /dU M ) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at $0.85 eV above the valence-band edge.

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“…The ideality factor mentioned is estimated in the voltage range 0.032 to 0.524 V. Usually n = 1 for ideal diode, so the high value of ideality factor can be attributed to the effect of series resistance, voltage dependence of the BH and the voltage drop across the interfacial layer. Such type of interfacial layer is formed while fabricating the device by using conventional methods and before the process of the evaporation of the metals on the front surface of the n-type InGaN substrate [14][15][16].…”

Section: Results and Dicussionmentioning

confidence: 99%

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

Padma

Reddy

2017

Физика И Техника Полупроводников

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Analysis of I–V characteristics on Au/n-type GaAs Schottky structures in wide temperature range

Cited by 83 publications

References 29 publications

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

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