Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor

Enichlmair, H.; Carniello, S.; Park, Jong Mun; Minixhofer, R.

doi:10.1016/j.microrel.2007.07.034

Cited by 7 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The degradation under dynamic stress conditions, especially for large drain voltages, is found to be more pronounced than expected. The damage due to hot carriers is caused by breaking of the Si-H bonds in the vicinity of the interface which results in interface states generation and bulk oxide charge build-up (Ancona et al, 1988;Mahapatra et al, 2000;Cristoloveanu et al, 1993), becomes pronounced at higher temperatures (Song et al, 1997;Bravaix et al, 1999;Moens et al, 2007;Enichlmair et al, 2007). The effect of HCD in nano scale devices increases at higher temperatures because of increase in carrier scattering (Lee et al, 2008;Jo et al, 2009, Amat et al, 2010.…”

Section: Hcd Simulationmentioning

confidence: 99%

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Das

Dash

Maiti

2018

IJNP

View full text Add to dashboard Cite

The aim of this work is to study hot carrier degradation starting from microscopic mechanisms of defect generation and its effects on noise behaviour of scaled strained-Si MOSFETs. As device dimensions decrease, hot carrier effects, which are mainly due to the presence of a high electric field inside the device, are becoming a major device/circuit design concern. Studies of hot carrier degradation in high-mobility SiGe channel MOSFETs, in which a more severe degradation is expected due to the smaller bandgap compared to Si, are highly essential. A comprehensive model for hot carrier degradation has been used in simulation to capture the physical picture behind these detrimental effects. In this work, hot carrier degradation modelling issues have been carefully analysed and a comprehensive physics-based hot carrier degradation simulation study has been taken up. Peculiarities of the defect generation kinetics as well as their impact on degradation are discussed. We present the results of our studies on the hot carrier degradation in novel high-mobility SiGe/strained-Si channel MOSFETs and its effects on the low-frequency noise. It is shown due to hot carrier degradation, the hole mobility is degraded by about 40% after stressing. A twofold degradation in drain current is also observed.

show abstract

Section: Hcd Simulationmentioning

confidence: 99%

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Das

Dash

Maiti

2018

IJNP

View full text Add to dashboard Cite

show abstract

“…EES also changes the temper-ature behavior of HCD. In fact, in long-channel devices HCD becomes less pronounced at elevated temperatures [22,41,[55][56][57][58]. The reason is that the scattering mechanisms depopulate the high energetical fraction of the carrier ensemble.…”

Section: Characteristic Features Of Hot-carrier Degradationmentioning

confidence: 99%

Modeling of hot-carrier degradation based on thorough carrier transport treatment

Tyaginov

Wimmer²

2014

FACTA U EE

View full text Add to dashboard Cite

We present and validate a physics-based model for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

show abstract

“…0)V) to give a full picture of the device's drift behavior in the inversion region over a 2-dimensional stress voltage parameter space. To analyze the temperature influence on the presented effects (hot-carrier degradation is known to diminish at higher temperatures in long-channel devices and to become more severe in ultrascaled counterparts [11]- [16]) all measurements have been performed at room temperature and at 125 • C.…”

Section: Measurementsmentioning

confidence: 99%

Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors

Rott

Nielen

Reisinger

et al. 2013

2013 IEEE International Integrated Reliability Workshop Final Report

View full text Add to dashboard Cite

We present hot-carrier measurement results on a 130nm dual gate oxide MOS transistor technology node which is used for automotive and analog applications with a nominal voltage of 3.3V. Transistors of several geometries have been stressed at various gate and drain voltage combinations at room and elevated (125 • C) temperatures. The results show two main degradation effects with one drift type (DIsub,max) close to the traditional hot-carrier degradation worst-case condition and another (DΨ,max) for Vds = Vgs. Both effects compensate the drift after a specific stress time. The drifts and their compensation are clearly observable by analyzing the change of the substrate current characteristics over stress time. In the literature several mechanisms for hot-carrier degradation have been reported. The first effect is related to the bond dissociation caused by a single high energetic carrier while the second one is due to the multiple vibrational excitation of the bond by several "colder" carriers. The results underline the importance of that approach and provide a benchmark for device degradation simulations due to the good separability of the observed effects. Long term stress data show that even for low Vgs the drift type DIsub,max will be compensated by DΨ,max. Drift compensating effect during HC degradation Rott et al. 7 7 2013 IIRW FINAL REPORT

show abstract

Analysis of hot carrier effects in a 0.35μm high voltage n-channel LDMOS transistor

Cited by 7 publications

References 7 publications

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Modeling of hot-carrier degradation based on thorough carrier transport treatment

Drift compensating effect during hot-carrier degradation of 130nm technology dual gate oxide P-channel transistors

Contact Info

Product

Resources

About