Analysis of High-Speed PCB With SiC Devices by Investigating Turn-Off Overvoltage and Interconnection Inductance Influence

Abstract

Silicon (Si) carbide (SiC)-based power switching devices provide significant performance improvements compared to conventional Si devices. The superior characteristics enable considerable loss, size, and weight reduction of power converters in the powertrain of hybrid/electric vehicles. However, the fast switching capability of SiC devices renders them more vulnerable to parasitic inductances in the circuit. The purpose of this paper is to analyze the impact of interconnection inductances to overvoltage during turn-OFF transient of SiC devices. To understand the switching behavior of the SiC devices, the ringing and overshoots of the voltage caused by the device capacitance and interconnection inductances are considered. Parametric studies are conducted to compare the influences of printed circuit board (PCB) and packaging inductances on the peak turn-OFF overvoltage under various operating conditions. A prototype half-bridge buck converter with SiC MOSFETs is constructed for the experiments. Experimental results are shown to validate the simulation results. Index Terms-Hybrid/electric vehicle, parasitic inductance, silicon (Si) carbide (SiC), voltage overshoot.

Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET

“…In t2~ta, because ugs is maintained at Vmil1, VCC and VZ are connected in series to charge Csc. The expression is written as (13).…”

“…According to the mechanism of voltage oscillation, reducing the stray inductance of the primary circuit [13] is the fundamental solution, but in practical application, it is difficult to eliminate the stray inductance. Currently, improving the gate driver to suppress voltage oscillation is the leading research direction.…”

Highly Efficient Three-Phase Bi-Directional SiC DC–AC Inverter for Electric Vehicle Flywheel Emulator

“…The authors in [17] demonstrate that silicon carbide (SiC)-based power switching devices offer significant performance improvements over conventional silicon-based devices. These enhanced performance characteristics allow for a significant reduction in the losses, size, and weight of power converters in hybrid/electric vehicle powertrains.…”

Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review

“…In a complicated resonance process, the impact of individual inductances (L d , L g , L s ) on the oscillation is different. Analytical (Xiao et al, 2004;Ren et al, 2006;Zhang et al, 2008;Li et al, 2011;Wang et al, 2012;Alexakis et al, 2013;Raee et al, 2013;Takao and Ohashi, 2013;Azizouglu and Karaca, 2014;Nayak and Hatua, 2016;Xie et al, 2016) and empirical methods (Chen, 2009;Chen et al, 2010;Zhang et al, 2012;Chen et al, 2013a;Stewart et al, 2013;Wada et al, 2013;Anthon et al, 2014;Noppakunkajorn et al, 2014;Noppakunkajorn et al, 2015;Walder and Yuan, 2015;Wang X. et al, 2017) have been reported that investigated the impact of different parasitic inductance on oscillation. As shown in Figure 3B, it is concluded that the impact of L g on damped oscillation is negligible and the main contributor is L d (Chen, 2009;Khanna et al, 2013).…”