Analysis of high-power devices using proton beam induced charge microscopy

Zmeck, M.; Phang, J.C.H.; Bettiol, Andrew A.; Osipowicz, T.; Watt, F.; Balk, L.J.; Niedernostheide, F.‐J.; Schulze, Hans‐Joachim; Falck, E.; Barthelmess, R.

doi:10.1016/s0026-2714(01)00159-7

Cited by 4 publications

(2 citation statements)

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“…Our previous work on high power devices (light-triggered thyristors [6] and high voltage diodes with field ring structures [7]) clearly demonstrated that IBIC is a promising tool for the analysis of deeply buried structures of high power devices.…”

Section: Introductionmentioning

confidence: 98%

Ion beam induced charge microscopy studies of power diodes

Zmeck

Balk

Osipowicz

et al. 2003

J. Phys.: Condens. Matter

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Ion beam induced charge microscopy (IBIC microscopy) has been established recently as an analytical tool for the characterization of various types of semiconductor devices. In this paper the potential of IBIC microscopy for the analysis of deeply buried structures of high power devices under biases of more than 2 kV is discussed. Such data are useful in the design process of high power devices because excessive fields at device edge regions or within protection elements (e.g. field ring structures) can be avoided. Since charge collection efficiency within depleted pn junctions is typically 100% for IBIC analysis, the contrast due to E-field variations within the large depletion regions of high power devices is limited. Here we will introduce a new approach for enhancing this contrast by using the temporal information from the IBIC signals gained with a transient IBIC set-up. Simulations and experimental data will be compared to evaluate the suitability of the new approach. The device used here is a high voltage diode with a field ring structure which was analysed using a 2 MeV proton beam.

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Section: Introductionmentioning

confidence: 98%

Ion beam induced charge microscopy studies of power diodes

Zmeck

Balk

Osipowicz

et al. 2003

J. Phys.: Condens. Matter

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“…Fragmentation properties of shielding materials can affect protection of astronauts seriously. Radiations have also an adverse effect on microelectronic devices employed in the control systems of high altitude commercial aviation aircrafts and spacecrafts, leading to the failure of such devices [1]. Nuclear fragmentation cross sections are crucial to issues of radiation transport through shielding materials and resulting shielding effect [2].…”

Section: Introductionmentioning

confidence: 99%

Nuclear Track Detectors for Relativistic Nuclear Fragmentation Studies: Comparison with Other Competitive Techniques

Rana¹,

Sher²,

Manzoor³

et al. 2013

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The potential of the high resolution nuclear track detector (NTD) CR-39 is examined carefully for the measurement of relativistic nuclear projectile fragmentation cross sections and studies of related processes using the experience of many years of such measurements. The charge resolution and the charge resolving power of CR-39 detectors for the measurements of 158 A GeV 207 Pb projectiles and their fragments are presented. Exposures of target-detector stacks, the chemical etching procedure and the nuclear track measurements are described in detail discussing precautions and possible errors. The procedures discussed are also valid for other NTDs. A comparison with electronic active detectors is also made considering important detection and measurement aspects. An experimental design proposing the co-use of NTDs with in-use active detectors is described.

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