Analysis of high electromechanical coupling coefficient zinc oxide Lame’ mode resonators and a design technique for spurious mode mitigation

Workie, Temesgen Bailie; Tang, Panliang; Bao, Jingfu; Hashimoto, Ken-ya

doi:10.1016/j.cjph.2022.03.022

Cited by 4 publications

(3 citation statements)

References 34 publications

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“…The EMCC (Κ 2 = 0.145) is obtained from [18]. The calculated electron drift velocities as a function of electric fields are drawn in Figure 5 (a).…”

Section: Resultsmentioning

confidence: 99%

“…Q. Li et al [16] pointed out that polar optical phonon (POP) scattering is usually the dominant scattering mechanism in MgZnO/ZnO material systems at room temperature. Compared with other wide band-gap materials, ZnO can offer remarkably high electromechanical coupling coefficient (EMCC) [18,19], which will result in the relative high rate of piezoelectric acoustic phonon (PAP) scattering. M. Khalil et al [20] studied the electron capure (CPR) and escape (ESC) due to the polar optical phonon scattering in QWs.…”

Section: Introductionmentioning

confidence: 99%

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Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

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In this work, the electron transport in MgxZn1-xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scatterings including deformed acoustic phonon (DAC), piezoelectric acoustic phonon (PAP), polar optical phonon (POP), interface roughness (IFR), dislocation (DIS), electron escape (ESC) and capture (CPR) by optical phonon, and random alloy (RAS), are considered in EMC.Electron drift velocities in MgxZn1-xO/ZnO heterostructures with various Mg composition x (0.1~0.3) are calculated at electric fields up to 25kV/cm. We find that there is no obvious velocity saturation occuring in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms that limit the drift velocity. On the other hand, it is found that the competition between IFR and intersubband POP scatterings plays an important role in the change of electron drift velocity with the increasing Mg compositions.

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“…The EMCC (Κ 2 = 0.145) is obtained from [18]. The calculated electron drift velocities as a function of electric fields are drawn in Figure 5 (a).…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

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“…3b [38]. The k 2 33 of AlN was determined in the range of 6-7% [77], which is also lower than those of ZnO [33,78] and PZT [34,79]. As discussed before, the k t 2 determines the filter bandwidth, thus attempts have been devoted to increasing this value [38,80].…”

Section: Aln and Its Alloysmentioning

confidence: 95%

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Zha,

Luo,

Tao

et al. 2024

AAPPS Bull.

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Bandpass filters with high frequency and wide bandwidth are indispensable parts of the fifth-generation telecommunication technologies, and currently, they are mainly based on surface and bulk acoustic wave resonators. Owing to its high mechanical strength, excellent stability at elevated temperatures, good thermal conductivity, and compatibility with complementary metal-oxide-semiconductor technology, aluminum nitride (AlN) becomes the primary piezoelectric material for high-frequency resonators. This review briefly introduces the structures and key performance parameters of the acoustic resonators. The common filter topologies are also discussed. In particular, research progresses in the piezoelectric AlN layer, electrodes, and substrates of the resonators are elaborated. Increasing the electromechanical coupling constant is the main concern for the AlN film. To synthesize AlN in single-crystalline or poly-crystalline with a high intensity of (0002) orientation, and alloy the AlN with other elements are two effective approaches. For the substrates and bottom electrodes, lattice and thermal expansion mismatch, and surface roughness are critical for the synthesis of a high-crystal-quality piezoelectric layer. The electrodes with low electrical resistance, large acoustic-impedance mismatch to the piezoelectric layer, and low density are ideal to reduce insertion loss. Based on the research progress, several possible research directions in the AlN-based filters are suggested at the end of the paper.

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Theoretical calculations of THz intersubband absorption in step quantum well structures based on MgZnO/ZnO materials at 77 K

Liu

2023

Opt Quant Electron

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Analysis of high electromechanical coupling coefficient zinc oxide Lame’ mode resonators and a design technique for spurious mode mitigation

Cited by 4 publications

References 34 publications

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Surface and bulk acoustic wave resonators based on aluminum nitride for bandpass filters

Theoretical calculations of THz intersubband absorption in step quantum well structures based on MgZnO/ZnO materials at 77 K

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