Theoretical calculations of THz intersubband absorption in step quantum well structures based on MgZnO/ZnO materials at 77 K

Liu, DongFeng

doi:10.1007/s11082-023-05247-0

Cited by 1 publication

(1 citation statement)

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“…They showed that by optimising the design structure of RTDs, the constituent layer material, its width and the doping level, the mW level of the output power of terahertz emissions from these devices can be achieved at room temperature [48]. Liu et al investigated THz intersubband absorption in step quantum well structures based on ZnO/ZnMgO materials at 77 K [49]. Recently, Meng et al demonstrated the first intersubband electroluminescence from nonpolar m-plane ZnO QC structures [46].…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation

Atić,

Wang,

Vuković

et al. 2024

Materials

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ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.

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Section: Introductionmentioning

confidence: 99%