Analysis of grain boundaries by HREM

Elgat, Z.; Carter, C.B.

doi:10.1016/0304-3991(85)90149-4

Cited by 9 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The E27 <110> symmetrical tilt grain-boundary segment in Ge has a fairly complex repeating structural unit configuration, and can occur in different configurations [1][2][3][4]. Defects in the ordering of the structural units are also observed [3], as well as defects in the grain boundary structure itself [4].…”

Section: Introductionmentioning

confidence: 99%

Image Simulations of Ge Twin Boundaries.

McKernan

Carter

1992

MRS Proc.

View full text Add to dashboard Cite

General high-angle tilt grain boundaries may be described by an arrangement of repeating structural units. Some grain-boundary defects may also be modeled by the incorporation of structural units of related boundary structures into the boundary. The simulation of these structures requires the use of prohibitively large unit cells. The possibility of modeling these boundaries by the superposition of image simulations of the individual structural units is investigated.

show abstract

Section: Introductionmentioning

confidence: 99%

Image Simulations of Ge Twin Boundaries.

McKernan

Carter

1992

MRS Proc.

View full text Add to dashboard Cite

show abstract

“… Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al , 1992; Elgat et al , 1985) or to metallograpical investigations of the grain boundary (Randle et al , 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation.…”

mentioning

confidence: 99%

Novel combination of orientation measurements and transmission microscopy for experimental determination of grain boundary miller indices in silicon and other semiconductors

Funke

Behm

Helbig

et al. 2012

Journal of Microscopy

View full text Add to dashboard Cite

Summary The determination of grain boundary planes in multicrystalline material has only been restricted to transmission electron microscope investigations (Jang et al., 1992; Elgat et al., 1985) or to metallograpical investigations of the grain boundary (Randle et al., 1993). The first method is expensive, and both are complex and time consuming in grain boundary preparation. This paper proposes the determination of grain boundary planes in semiconductor wafer by a combined application of Electron Back Scatter Diffraction and Infrared Transmission Microscopy. In particular, the new method is demonstrated with directional solidificated multicrystalline silicon.

show abstract