Analysis of elastic and plastic deformation associated with indentation testing of thin films on substrates

Bhattacharya, A. K.; Nix, William D.

doi:10.1016/0020-7683(88)90091-1

Cited by 501 publications

(199 citation statements)

References 6 publications

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“…This is in agreement with what is reported in the literature that the initial stiffness of the unloading is predominantly controlled by the substrate for indentation depths larger than the film thickness. [13][14][15][16][17] At the onset of delamination, the substrate elastic energy reaches a constant value, whereas the film elastic energy decreases as the film unbends. This indicates that the main contribution to the energy release, and hence the advance of delamination, come from the film.…”

Section: B Finite-strength Interfacementioning

confidence: 99%

Delamination of a strong film from a ductile substrate during indentation unloading

Abdul-Baqi

Giessen

2001

J. Mater. Res.

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In this work, a finite element method was performed to simulate the spherical indentation of a ductile substrate coated by a strong thin film. Our objective was to study indentation-induced delamination of the film from the substrate. The film was assumed to be linear elastic, the substrate was elastic–perfectly plastic, and the indenter was rigid. The interface was modeled by means of a cohesive surface. The constitutive law of the cohesive surface included a coupled description of normal and tagential failure. Cracking of the coating itself was not included. During loading, it was found that delamination occurs in a tangential mode rather than a normal one and was initiated at two to three times the contact radius. Normal delamination occurred during the unloading stage, where a circular part of the coating, directly under the contact area was lifted off from the substrate. Normal delamination was imprinted on the load versus displacement curve as a hump. There was critical value of the interfacial strength above which delamination was prevented for a given material system and a given indentation depth. The energy consumption by the delamination process was calculated and separated from the part dissipated by the substrate. The effect of residual stress in the film and waviness of the interface on delamination was discussed.

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Section: B Finite-strength Interfacementioning

confidence: 99%

Delamination of a strong film from a ductile substrate during indentation unloading

Abdul-Baqi

Giessen

2001

J. Mater. Res.

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“…Readers are referred to Freund and Suresh (2004) for further details and references. Simulations based on continuum elastic-plastic analyses have typically been used to extract the plastic properties of the thin films from these nano-indentation measurements (Bhattacharya and Nix, 1988). However, these continuum calculations are unable to account for the size effects typically observed in the experiments.…”

Section: Introductionmentioning

confidence: 99%

Discrete dislocation plasticity analysis of the wedge indentation of films

Balint¹,

Deshpande²,

Needleman³

et al. 2006

Journal of the Mechanics and Physics of Solids

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Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. AbstractThe plane strain indentation of single crystal films on a rigid substrate by a rigid wedge indenter is analyzed using discrete dislocation plasticity. The crystals have three slip systems at AE35:3 and 90 with respect to the indentation direction. The analyses are carried out for three values of the film thickness, 2, 10 and 50 mm, and with the dislocations all of edge character modeled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated through a set of constitutive rules. Over the range of indentation depths considered, the indentation pressure for the 10 and 50 mm thick films decreases with increasing contact size and attains a contact size-independent value for contact lengths A44 mm. On the other hand, for the 2 mm films, the indentation pressure first decreases with increasing contact size and subsequently increases as the plastic zone reaches the rigid substrate. For the 10 and 50 mm thick films sink-in occurs around the indenter, while pile-up occurs in the 2 mm film when the plastic zone reaches the substrate. Comparisons are made with predictions obtained from other formulations: (i) the contact sizeindependent indentation pressure is compared with that given by continuum crystal plasticity; (ii) the scaling of the indentation pressure with indentation depth is compared with the relation proposed by Nix and Gao [1998

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“…Thus, the influence of the silicon substrate effects should have been minimal (Bhattacharya and Nix 1988).…”

Section: Methodsmentioning

confidence: 99%

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

Zhang¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, seerching data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Washington Headquarters Service, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and SUPPLEMENTARY NOTES14. ABSTRACT Plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) is the most commonly used interlayer dielectric (ILD) in MEMS devices and structures. In this project, PECVD SiOx is chosen as an example for the systematic study of mechanical behavior and underlying casual mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. In this project, PECVD SiO, is chosen as an example for the systematic study of mechanical behavior and underlying causal mechanisms of amorphous thin films for MEMS applications, which are generally less well understood because of the complex interplay among the deformation mechanisms. SUBJECT TERMSMechanical behaviors of the PECVD SiOx thin films are probed at 1) different size scales (from wafer level down to micro/nano-scale, and different lengthscale within each realm); 2) different temperatures (from room temperature up to 1100 0C); and 3) with a combination of different experimental techniques (such as substrate curvature measurements, nanoindentation tests, and a novel "microbridge testing" technique, etc.). A broad range of mechanical analysis is covered, including film stress and related material properties changes, elastic properties, plastic properties (both time-independent and time-dependent), deformation mechanisms (both at room temperature and elevated temperatures).Wherever applicable, materials analysis techniques such as SEM, AFM, FTIR, XRD, and SIMS were employed to strengthen the discussions on the structureproperties relationship and the causal mechanisms of the mechanical responses of the PECVD SiOx. These experiments reveal various interesting arid disiirictive characteristics of the mechanical responses of the PECVD SiOx thin films, and the microstructural causal mechanisms for each of them are analyzed in depth.The outcome of this work will provide a comprehensive characterization of the mechanical responses of the PECVD SiOx thin films under different thermal conditions, stress levels, size scales, and in both elastic and plastic regions. In addition, both new experimental methodologies and theoretical models for data 3 analysis are resulted, which can be readily applied to a wide variety of thin film materials for various different applications. Last but not least, the physical causal mechanisms for the experimental results are elucidated, ...

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Analysis of elastic and plastic deformation associated with indentation testing of thin films on substrates

Cited by 501 publications

References 6 publications

Delamination of a strong film from a ductile substrate during indentation unloading

Delamination of a strong film from a ductile substrate during indentation unloading

Discrete dislocation plasticity analysis of the wedge indentation of films

Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

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